2003. 1. 27
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SEMICONDUCTOR
TECHNICAL DATA
KDS142E
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package : ESM.
Low Forward Voltage : V
F
=1.0V (Max.).
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. CATHODE 1
2. ANODE 2
3. ANODE 1 / CATHODE 2
3
2
1
+
_
+
_
+
_
+
_
+_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Marking
DS
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
20
V
Reverse Voltage
V
R
20
V
Maximum (Peak) Forward Current
I
FM
200 *
mA
Average Forward Current
I
O
100 *
mA
Surge Current (1 s)
I
FSM
300 *
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : * Unit Rating. Total Rating=Unit Rating x 0.7
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
=10mA
-
-
1.0
V
Reverse Current
I
R
V
R
=15V
-
-
0.1
A
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