2001. 6. 11
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS135S
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
High Voltage Switching.
FEATURES
High Reliability.
Small surface mounting type (SOT-23).
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. NC
2. ANODE
3. CATHODE
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 - 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
2
1
3
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Maximum (Peak) Reverse Voltage
V
RM
300
V
Reverse Voltage
V
R
250
V
Maximum (Peak) Forward Current
I
FM
300
mA
Average Forward Current
I
O
100
mA
Surge Current (10mS)
I
FSM
2
A
Power Dissipation
P
D
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
=100mA
-
1.0
1.2
V
Reverse Current
I
R(1)
V
R
=250V
-
0.04
0.2
A
I
R(2)
V
R
=300V
-
-
100
Total Capacitance
C
T
V
R
=0V, f=1MHz
-
1.35
3
pF
Reverse Recovery Time
t
rr
I
R
=30mA, I
F
=30mA
-
30
100
nS
Type Name
Marking
Lot No.
J A
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