1999. 6. 7
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDS114E
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
VHF TUNER BAND SWITCH APPLICATIONS.
FEATURES
Small Package.
Small Total Capacitance : C
T
=1.2pF(Max.).
Low Series Resistance : r
S
=0.5 (Typ.).
MAXIMUM RATING (Ta=25 )
ESC
DIM
MILLIMETERS
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
CATHODE MARK
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05
F
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
30
V
Forward Current
I
F
100
mA
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Forward Voltage
V
F
I
F
=2mA
-
-
0.85
V
Reverse Current
I
R
V
R
=15V
-
-
0.1
A
Reverse Voltage
V
R
I
R
=1 A
30
-
-
V
Total Capacitance
C
T
V
R
=6V, f=1MHz
-
0.7
1.2
pF
Series Resistance
r
s
I
F
=2mA, f=100MHz
-
0.5
0.9
Type Name
Marking
D
U
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