1999. 11. 30
1/1
SEMICONDUCTOR
TECHNICAL DATA
BC549/550
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
LOW NOISE AMPLIFIER APPLICATION.
FEATURE
For Complementary with PNP Type BC559/560.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. COLLECTOR
2. BASE
3. EMITTER
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter
Breakdown Voltage
BC549
V
(BR)CEO
I
C
=10mA, I
B
=0
30
-
-
V
BC550
45
-
-
Collector-Base
Breakdown Voltage
BC549
V
(BR)CBO
I
C
=10 A, I
E
=0
30
-
-
V
BC550
50
-
-
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5.0
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
-
-
15
nA
DC Current Gain
h
FE
(Note)
I
C
=2mA, V
CE
=5V
110
-
800
Base-Emitter Voltage
V
BE(ON)
I
C
=2mA, V
CE
=5V
0.55
-
0.7
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=5mA
-
-
0.6
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=100mA, I
B
=5mA
-
0.9
-
V
Transition Frequency
f
T
I
C
=10mA, V
CE
=5V, f=100MHz
-
300
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
-
4.5
pF
Noise Figure
BC549
NF
I
C
=200 A, V
CE
=5V
Rg=10k , f=1kHz
-
-
4.0
dB
BC550
-
-
10
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
BC549
V
CBO
30
V
BC550
50
Collector-Emitter Voltage
BC549
V
CEO
30
V
BC550
45
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
Note : h
FE
Classification A:110 220, B:200 450, C:420 800
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