JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
KSA928A
TRANSISTOR
PNP
FEATURE
Audio power amplifier
Complement to Application
MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol Parameter Value
Units
V
CBO
Collector-Base Voltage
-30 V
V
CEO
Collector-Emitter Voltage
-30
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current -Continuous
-2
A
P
C
Collector Dissipation
1
W
T
J
, T
stg
Junction and Storage Temperature
-55 to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYPE
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= -100
A
I
E
=0
-30
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= -10 mA , I
B
=0 -30
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= -1mA
I
C
=0
-5
V
Collector cut-off current
I
CBO
V
CB
= -30 V, IE=0
-0.1
A
Emitter cut-off current
I
EBO
V
EB
= -5V, IC=0
-0.1
A
DC current gain
h
FE
V
CE
=-2 V, IC= -500mA
100
320
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -1.5 A, I
B
= -0.03A
-2
V
Base-emitter voltage
V
BE
I
C
= -500 mA, VCE= -2V
-1
V
Transition frequency
f
T
V
CE
= -2 V, I
C
= -500mA
120
MHz
Collector output capacitance
C
ob
V
CB
=-10V,I
E
=0,f=1MHz
48
pF
CLASSIFICATION OF hFE
Rank
O Y
Range
100-200 160-320
1 2 3
TO-92L
1.EMITTER
2.COLLECTOR
3.BASE
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