© 2000 IXYS All rights reserved
1 - 2
Features
· Package with copper
base plate
· Isolation voltage 3000 V~
· Planar passivated chips
· Low forward voltage drop
· ¼" fast-on power terminals
Applications
· Supplies for DC power equipment
· Input rectifiers for PWM inverter
· Battery DC power supplies
· Field supply for DC motors
Advantages
· Easy to mount with two screws
· Space and weight savings
· Improved temperature and power
cycling capability
· Small and light weight
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode/thyristor unless otherwise stated
x
for resistive load at bridge output. IXYS reserves the right to change limits, test conditions and
dimensions.
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
800
800
xxx 70-08io7
1200
1200
xxx 70-12io7
1400
1400
xxx 70-14io7
1600
1600
xxx 70-16io7
xxx = type
I
dAV
= 70 A
V
RRM
= 800-1600 V
Symbol
Test Conditions
Maximum Ratings
I
dAV
x
T
C
= 85°C, module
70
A
I
dAVM
x
module
70
A
I
FRMS
, I
TRMS
per leg
36
A
I
FSM
, I
TSM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
550
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
600
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
500
A
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
550
A
I
2
t
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
1520
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
1520
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1250
A
2
s
V
R
= 0 V
t = 8.3 ms (60 Hz), sine
1250
A
2
s
(di/dt)
cr
T
VJ
= 125°C
repetitive, I
T
= 50 A
150
A/
m
s
f = 50 Hz, t
P
= 200
m
s
V
D
= 2/3 V
DRM
I
G
= 0.3 A,
non repetitive, I
T
= 1/2 · I
dAV
500
A/
m
s
di
G
/dt = 0.3 A/
m
s
(dv/dt)
cr
T
VJ
= T
VJM
; V
DR
= 2/3 V
DRM
1000
V/
m
s
R
GK
=
¥
; method 1 (linear voltage rise)
V
RGM
10
V
P
GM
T
VJ
= T
VJM
t
p
=
30
m
s
£
10
W
I
T
= I
TAVM
t
p
= 500
m
s
£
5
W
t
p
=
10 ms
£
1
W
P
GAVM
0.5
W
T
VJ
-40...+125
°C
T
VJM
125
°C
T
stg
-40...+125
°C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
£
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
(M5)
5 ± 15 %
Nm
(10-32 UNF)
44 ± 15 %
lb.in.
Weight
50
g
Preliminary data
VVZ 70
VVZF 70
VTO 70
VTOF 70
Three Phase
Rectifier Bridge
C
D
E
A
2
3
B
1
5
4
6
VTOF 70
C
D
E
A
2
3
B
1
5
4
6
VTO 70
VVZ 70
C
D
E
A
2
3
B
1
A
C
D
E
2
3
B
1
VVZF 70
008
© 2000 IXYS All rights reserved
2 - 2
Symbol
Test Conditions
Characteristic Values
I
D
, I
R
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
£
5
mA
V
T
I
T
= 80 A; T
VJ
= 25°C
£
1.64
V
V
T0
For power-loss calculations only
0.85
V
r
T
11
m
W
V
GT
V
D
= 6 V;
T
VJ
= 25°C
£
1.5
V
T
VJ
= -40°C
£
1.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25°C
£
100
mA
T
VJ
= -40°C
£
200
mA
V
GD
T
VJ
= T
VJM
;
V
D
= 2/3 V
DRM
£
0.2
V
I
GD
£
5
mA
I
L
T
VJ
= 25°C; t
P
= 10
m
s
£
450
mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/
m
s
I
H
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
¥
£
200
mA
t
gd
T
VJ
= 25°C; V
D
= 1/2 V
DRM
£
2
m
s
I
G
= 0.45 A; di
G
/dt = 0.45 A/
m
s
t
q
T
VJ
= T
VJM
; I
T
= 20 A, t
P
= 200
m
s; di/dt = -10 A/
m
s
typ.
250
m
s
V
R
= 100 V; dv/dt = 15 V/
m
s; V
D
= 2/3 V
DRM
R
thJC
per thyristor / Diode; DC
0.9
K/W
per module
0.15
K/W
R
thJH
per thyristor / Diode; DC
1.1
K/W
per module
0.157
K/W
d
S
Creeping distance on surface
16.1
mm
d
A
Creepage distance in air
7.5
mm
a
Max. allowable acceleration
50
m/s
2
VVZ 70
VVZF 70
VTO 70
VTOF 70
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