© 2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V
V
600
600
VUO 36-06NO8
1200
1200
VUO 36-12NO8
1400
1400
VUO 36-14NO8
1600
1600
VUO 36-16NO8
1800
1800
VUO 36-18NO8
Symbol
Test Conditions
Maximum Ratings
I
dAV
T
C
= 85
°
C, module
27
A
I
dAVM
T
C
= 62
°
C, module
35
A
I
FSM
T
VJ
= 45
°
C;
t = 10 ms (50 Hz), sine
550
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
600
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
500
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
550
A
I
2
t
T
VJ
= 45
°
C
t = 10 ms (50 Hz), sine
1520
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1520
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1250
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
1250
A
2
s
T
VJ
-40...+150
°
C
T
VJM
150
°
C
T
stg
-40...+150
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
£
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
(M5)
2
±
10 %
Nm
(10-32 UNF)
18
±
10 %
lb.in.
Weight
typ.
22
g
I
dAVM
= 35 A
V
RRM
= 1200-1800 V
Features
q
Package with ¼" fast-on terminals
q
Isolation voltage 3000 V~
q
Planar passivated chips
q
Blocking voltage up to 1800 V
q
Low forward voltage drop
q
UL registered E 72873
Applications
q
Supplies for DC power equipment
q
Input rectifiers for PWM inverter
q
Battery DC power supplies
q
Field supply for DC motors
Advantages
q
Easy to mount with one screw
q
Space and weight savings
q
Improved temperature and power
cycling
Data according to DIN IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol
Test Conditions
Characteristic Values
I
R
T
VJ
= 25
°
C;
V
R
= V
RRM
£
0.3
mA
T
VJ
= T
VJM
;
V
R
= V
RRM
£
2.0
mA
V
F
I
F
= 150 A;
T
VJ
= 25
°
C
£
1.7
V
V
T0
For power-loss calculations only
0.8
V
r
T
7.4
m
W
R
thJC
per diode; DC current
7.5
K/W
per module
1.25
K/W
R
thJH
per diode; DC current
8.4
K/W
per module
1.4
K/W
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.4
mm
a
Max. allowable acceleration
50
m/s
2
Dimensions in mm (1 mm = 0.0394")
VUO 36
Three Phase
Rectifier Bridge
~
~
~
+
-
~
~
~
+
© 2000 IXYS All rights reserved
2 - 2
VUO 36
Fig. 6 Transient thermal impedance per diode
Fig. 1 Forward current versus
Fig. 2 Surge overload current per diode
Fig. 3 I
2
t versus time (1-10 ms)
voltage drop per diode
I
FSM
: Crest value. t: duration
per diode
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 5 Maximum forward current at
case temperature
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.183
0.032
2
0.528
0.085
3
1.89
5.9
4
4.9
8.3
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.183
0.032
2
0.528
0.085
3
1.89
5.9
4
4.9
8.3
5
0.9
28.0
I
2
t
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