© 2000 IXYS All rights reserved
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V
RSM
V
RRM
Type
V
V
1200
1200
VUO 18-12DT8
1400
1400
VUO 18-14DT8
1600
1600
VUO 18-16DT8
Symbol
Test Conditions
Maximum Ratings
I
dAV
T
C
= 85
°
C, module
14
A
I
dAVM
T
C
= 63
°
C, module
18
A
I
FSM
T
VJ
= 45
°
C;
t = 10 ms (50 Hz), sine
300
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
330
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
270
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
300
A
I
2
t
T
VJ
= 45
°
C
t = 10 ms (50 Hz), sine
450
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
460
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
365
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
380
A
2
s
T
VJ
-40...+150
°
C
T
VJM
150
°
C
T
stg
-40...+150
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
£
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
(M5)
2
±
10 %
Nm
(10-32 UNF)
18
±
10 %
lb.in.
Weight
typ.
22
g
Three Phase
I
dAVM
= 18 A
Rectifier Bridges
V
RRM
= 1200-1600 V
with Semi Fast Diodes
Features
l
Package with 1/4" fast-on terminals
l
Isolation voltage 3000 V~
l
Planar passivated chips
l
Blocking voltage up to 1600 V
l
Low forward voltage drop
l
UL registered E 72873
Applications
l
Supplies for DC power equipment
l
Input rectifiers for PWM inverter
l
Battery DC power supplies
l
Field supply for DC motors
Advantages
l
Easy to mount with one screw
l
Space and weight savings
l
Improved temperature and power
cycling
l
Up to 10 dB lower EMI/RFI
compared to standard rectifier
-
~ ~ ~ +
~
~
~
+
-
Data according to IEC 60747
Symbol
Test Conditions
Characteristic Values
I
R
T
VJ
= 25
°
C; V
R
= V
RRM
£
0.3
mA
T
VJ
= 125°C; V
R
= V
RRM
£
5.0
mA
V
F
I
F
= 55 A; T
VJ
= 25
°
C
£
1.85
V
V
T0
For power-loss calculations only
1.2
V
r
T
T
VJ
= T
VJM
16
m
W
t
rr
T
VJ
= 25
°
C; I
F
= 10 A;
£
1.5
m
s
-di/dt = 10 A/
m
s, V
R
= 1/2 V
RRM
R
thJC
per diode; 120° el
9.3
K/W
per module
1.55
K/W
R
thJK
per diode; 120° e
10.2
K/W
per module
1.7
K/W
d
S
Creeping distance on surface
12.7
mm
d
A
Creepage distance in air
9.4
mm
a
Max. allowable acceleration
50
m/s
2
Dimensions in mm (1 mm = 0.0394")
032
VUO 18
Preliminary Data
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