© 2002 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
Features
· three phase mains rectifier
· brake chopper:
- IGBT with low saturation voltage
- HiPerFRED
TM
free wheeling diode
· module package:
- high level of integration
- solder terminals for PCB mounting
- isolated DCB ceramic base plate
Applications
drives with
· mains input
· DC link
· inverter or chopper feeding the machine
· motor and generator/brake operation
V
RRM
= 1200/1600 V
I
dAVM
= 56 A
Input Rectifier D1 - D6
Symbol
Conditions
Maximum Ratings
V
RRM
1200/1600
V
I
FAV
T
C
= 100°C; sine 180°
22
A
I
DAVM
T
C
= 100°C; rectangular; d =
1
/
3
; bridge
56
A
I
FSM
T
VJ
= 25°C; t = 10 ms; sine 50 Hz
300
A
P
tot
T
C
= 25°C
90
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 45 A;
T
VJ
= 25°C
1.3
1.6
V
T
VJ
= 125°C
1.2
V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C
0.2
mA
V
R
= 0.8
·
V
RRM
; T
VJ
= 125°C
0.4
mA
R
thJC
per diode; rectangular 120°
1.45 K/W
R
thJH
with heat transfer paste
1.8
K/W
Chopper Diode D
Symbol
Conditions
Maximum Ratings
V
RRM
T
VJ
= 25°C to 150°C
1200
V
I
F25
DC; T
C
= 25°C
15
A
I
F80
DC; T
C
= 80°C
10
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 10 A; T
VJ
= 25°C
2.6
3.0
V
T
VJ
= 125°C
1.9
V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C
0.06
mA
T
VJ
= 125°C
0.06
mA
I
RM
I
F
= 10 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C
13
A
t
rr
V
R
= 600 V
110
ns
R
thJC
3.5 K/W
R
thJH
with heat transfer paste
5
K/W
214
Advanced Technical Information
VUB 50
V
RRM
Type
V
1200
VUB 50-12 PO1
1600
VUB 50-16 PO1
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System in ECO-PAC 2
D1
D3
D5
D2
D4
D6
K1
D1
G1
A4
V16
N7
R9
L9
X18
D
T
© 2002 IXYS All rights reserved
2 - 2
Chopper Transistor T
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
±
20
V
I
C25
DC; T
C
= 25°C
18
A
I
C80
DC; T
C
= 80°C
14
A
I
CM
V
GE
=
±
15 V; R
G
= 82
; T
VJ
= 125°C
20
A
V
CEK
RBSOA; L = 100 µH; clamped inductive load
V
CES
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 10 A; V
GE
= 15 V; T
VJ
= 25°C
2.3
2.7
V
T
VJ
= 125°C
2.7
V
V
GE(th)
I
C
= 0.4 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
0.5
mA
T
VJ
= 125°C
0.8
mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
50
ns
t
r
40
ns
t
d(off)
290
ns
t
f
60
ns
E
on
1.2
mJ
E
off
1.1
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
600
pF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 10 A
45
nC
R
thJC
1.4 K/W
R
thJH
with heat transfer paste
2.7
K/W
Inductive load, T
VJ
= 125°C
V
CE
= 600 V; I
C
= 10 A
V
GE
= ±15 V; R
G
= 82
Dimensions in mm (1 mm = 0.0394")
VUB 50
Module
Symbol
Conditions
Maximum Ratings
T
VJ
-40...+150
°
C
T
stg
-40...+125
°
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz; t = 1 sec
3600
V~
M
d
Mounting torque (M5)
1.5 - 2
Nm
14 - 18
lb.in.
Symbol
Conditions
Characteristic Values
min.
typ.
max.
d
A
, d
S
pin to heatsink
11.2
mm
Weight
24
g
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