1 - 8

MUBW 35-06 A6

Rectifier

Brake

Inverter

RRM

= 1200V

CES

= 600 V

CES

= 600 V

FAVM

= 25 A

C25

= 23 A

C25

= 38 A

FSM

= 370 A

CE(sat)

= 2.1 V

CE(sat)

= 2.1 V

Input Rectifier Bridge D8 - D13

Symbol

Conditions

Maximum Ratings

RRM

1200

= 25°C

FAVM

= 150°C; T

= 70°C

FSM

= 45°C; t = 10 ms sine 50 Hz

370

i²t

= 125°C

680

A²s

+150

°C

Symbol

Conditions

Characteristic Values

= 25

C, unless otherwise specified)

min.

typ.

max.

RRM

= 1200 V; T

= 25°C

µA

= 125°C

= 55 A

1.2

1.46

thJC

per die

1.05

°C/W

IXYS reserves the right to change limits, test conditions and dimensions.

Converter - Brake - Inverter Module (CBI1)

Features

NPT IGBT technology
Square RBSOA, no latchup

Free wheeling diodes with Hiperfast
and soft recovery behaviour

Isolation voltage 2500 V~

Built in temperature sense

High level of integration:
one module for complete drive
system

Direct Copper Bonded Al

ceramic

base plate

Applications

AC motor control

AC servo and robot drives

Advantages

No need of external isolation

Easy to mount with two screws

Package designed for wave
soldering

High temperature and power cycling
capability

031

2 - 8

Output Inverter T1 - T6, D1 - D6

Symbol

Conditions

Maximum Ratings

CES

= 25°C

600

CGR

= 25°C; R

= 20k

600

= 25°C

±20

= 25°C

= 90°C

= 1 ms = 1% duty cycle;

= 25°C

= 90°C

IGBT V

= 600 V; T

= 125°C

non-repetitive

µs

tot

= 25°C

104

Free-Wheeling Diode

+150

°C

IGBT

+150

°C

Symbol

Conditions

Characteristic Values

= 25

C, unless otherwise specified)

min.

typ.

max.

CES

= 0 V; V

= 600 V

GES

= 0 V; V

= 25 V

100

GE(th)

= V

; I

= 0.7 mA

4.5

5.5

6.5

(BR)CES

= 0 V; I

= 10 mA; T

= -40°C

600

CEsat

= 15 V; I

= 30 A;T

= 25°C

2.1

2.5

= 125°C

2.4

2.8

d(on)

d(off)

190

off

0.8

1.15

iss

1600

oss

170

rss

100

= 20 V; I

= 30 A

= 300 V; I

= 30A pulse; V

= 15 V

= 30 A; V

= 0 V; T

= 25°C

= 125°C

1.8

= 30 A; V

= 0 V; T

= 125°C

0.3

µs

= -300 V; di

/dt = -800 A/µs

= 30 A; V

= -300 V;

= 25°C

1.8

µC

/dt = -800 A/µs; V

= 0 V; T

= 125°C

3.8

µC

250

µA

thJC

IGBT

(per die)

1.0

°C/W

Diode

(per die)

1.3

°C/W

Inductive load, T

= 125°C

= 300 V; I

= 30 A

= 33

; V

= ±15 V

= 0 V

= 25 V

f = 1 MHz

MUBW 35-06 A6

3 - 8

MUBW 35-06 A6

Brake Chopper T7, D7

Symbol

Conditions

Maximum Ratings

CES

= 25°C

600

CGR

= 25°C; R

= 20k

600

= 25°C

±20

= 25°C

= 90°C

= 1 ms = 1% duty cycle;

= 25°C

= 90°C

IGBT V

= 600 V; T

= 125°C

non-repetitive

µs

tot

= 25°C

Free-Wheeling Diode

+150

°C

IGBT

+150

°C

Symbol

Conditions

Characteristic Values

= 25

C, unless otherwise specified)

min.

typ.

max.

CES

= 0 V; V

= 600 V

GES

= 0 V; V

= 25 V

100

GE(th)

= V

; I

= 0.4 mA

4.5

5.5

6.5

(BR)CES

= 0 V; I

= 10 mA; T

= -40°C

600

CE(sat)

= 15 V; I

= 15 A; T

= 25°C

2.1

2.5

= 125°C

2.4

2.8

d(on)

d(off)

200

off

0.5

0.7

iss

800

oss

rss

= 20 V; I

= 15 A

4.5

= 300 V; I

= 15 A pulse; V

= 15 V

= 15 A; V

= 0 V; T

= 25°C

= 125°C

1.8

= 15 A; V

= -300 V; T

= 125°C

0.25

µs

/dt = -500 A/µs; V

= 0 V

= 15 A; V

= -300 V;

= 25°C

0.4

µC

/dt = -500 A/µs; V

= 0 V; T

= 125°C

1.3

µC

250

µA

thJC

IGBT

(per die)

1.5

°C/W

Diode

(per die)

2.0

°C/W

Inductive load, T

= 125°C

= 300 V; I

= 15 A

= 68

; V

= ±15 V

= 0 V

= 25 V

f = 1 MHz

4 - 8

MUBW 35-06 A6

Module

Symbol

Conditions

Maximum Ratings

stg

-40...+125

ISOL

ISOL

1 mA; 50/60 Hz; t = 1 min

2500

Mounting torque (M4)

2.0 - 2.2

18 - 20

lb.in.

Creepage distance on surface

12.7

Strike distance in air

12.7

Weight

typ.

Temperature Sensor R

Symbol

Conditions

Maximum Ratings

amb

= 20°C

4.7

For additional data see C620/4.7k 5% S+M NTC thermistor catalog

Dimensions in mm (1 mm = 0.0394")

21.1 ± 0.5

17.1 ± 0.3

3.4 ± 0.1

5.7 ± 0.3

57.3-0.3

5.5+0.2

4.3+0.2

5 - 8

MUBW 35-06 A6

)60

)

Ã2Ã "8

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550

$ÃC

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Forward characteristics

Surge overload current
I

FSM

: crest value, t: duration

t versus time (1-10 ms)

thJH

[K/W]

0.0001

0.001

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t (s)

D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5

Input Rectifier Bridge D8 - D13

thJH

is measured using 50 µm

thermal grease)

Transient thermal resistance junction to heatsink

7 - 8

MUBW 35-06 A6

IGBT

thJH

[K/W]

0.001

0.01

0.1

0.00001

0.0001

0.001

0.01

0.1

100

t (s)

D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5

Output Inverter T1 - T6

Transient thermal resistance junction to heatsink

thJH

is measured using 50 µm

thermal grease)

8 - 8

MUBW 35-06 A6

23-06A

200

600

1000

400

800

100

110

120

130

120

160

0.0

0.5

1.0

1.5

2.0

°C

-di

/dt

200

400

600

800

1000

0.0

0.3

0.6

0.9

1.2

/dt

200

600

1000

400

800

100

1000

500

1000

1500

2000

2500

3000

0.0

0.5

1.0

1.5

2.0

-di

/dt

-di

/dt

= 60A

= 30A

= 15A

= 100°C

= 300V

= 100°C

= 30A

Peak reverse current I

versus -di

/dt

Reverse recovery charge Q

versus -di

/dt

Forward current I

versus V

= 100°C

= 300V

= 100°C

= 300V

= 60A

= 30A

= 15A

Dynamic parameters Q

, I

versus T

Recovery time t

versus -di

/dt

Peak forward voltage V

and t

versus di

/dt

= 60A

= 30A

= 15A

=25°C

=100°C

=150°C

FRED

thJH

[K/W]

0.001

0.01

0.1

0.00001 0.0001

0.001

0.01

0.1

100

t (s)

D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5

Output Inverter D1 - D6

thJH

is measured using 50 µm

thermal grease)

Transient thermal resistance junction to heatsink

Part Number MUBW35-06A6