© 2004 IXYS All rights reserved
1 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4
1
9
MCC 72
MCD 72
I
TRMS
= 2x180 A
I
TAVM
= 2x115 A
V
RRM
= 800-1800 V
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Features
· International standard package,
JEDEC TO-240 AA
· Direct copper bonded Al
2
O
3
-ceramic
base plate
· Planar passivated chips
· Isolation voltage 3600 V~
· UL registered, E 72873
· Gate-cathode twin pins for version 1B
Applications
· DC motor control
· Softstart AC motor controller
· Light, heat and temperature control
Advantages
· Space and weight savings
· Simple mounting with two screws
· Improved temperature and power cycling
· Reduced protection circuits
Symbol
Conditions
Maximum Ratings
I
TRMS
, I
FRMS
T
VJ
= T
VJM
180
A
I
TAVM
, I
FAVM
T
C
= 63°C; 180° sine
115
A
T
C
= 85°C; 180° sine
85
A
I
TSM
, I
FSM
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
1700
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1800
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
1540
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
1640
A
i
2
dt
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
14 450
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
13 500
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
11 850
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
11 300
A
2
s
(di/dt)
cr
T
VJ
= T
VJM
repetitive, I
T
= 250 A
150
A/µs
f = 50 Hz; t
P
=200 µs
V
D
=
2
/
3
V
DRM
I
G
= 0.45 A
non repetitive, I
T
= I
TAVM
500
A/µs
di
G
/dt = 0.45 A/µs
(dv/dt)
cr
T
VJ
= T
VJM
;
V
DR
=
2
/
3
V
DRM
1000
V/µs
R
GK
=
; method 1 (linear voltage rise)
P
GM
T
VJ
= T
VJM
;
t
P
=
30 µs
10
W
I
T
= I
TAVM
;
t
P
= 300 µs
5
W
P
GAV
0.5
W
V
RGM
10
V
T
VJ
-40...+125
°C
T
VJM
125
°C
T
stg
-40...+125
°C
V
ISOL
50/60 Hz, RMS;
t = 1 min
3000
V~
I
ISOL
1 mA;
t = 1 s
3600
V~
M
d
Mounting torque (M5)
2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5)
2.5-4.0/22-35 Nm/lb.in.
Weight
Typical including screws
90
g
Thyristor Modules
Thyristor/Diode Modules
6
7
4
5
3
2
1
TO-240 AA
MCD
Version 8 B
MCC
Version 8 B
MCC
Version 1 B
3
6 7 1
5 4 2
3
6
1
5 2
3
1
5 2
3
1
5 4 2
MCD
Version 1 B
V
RSM
V
RRM
Type
V
DSM
V
DRM
V
V
Version
1 B
8 B
Version
1 B
8 B
900
800
MCC 72-08 io1 B / io8 B
MCD 72-08 io1 B / io8 B
1300
1200
MCC 72-12 io1 B / io8 B
MCD 72-12 io1 B / io8 B
1500
1400
MCC 72-14 io1 B / io8 B
MCD 72-14 io1 B / io8 B
1700
1600
MCC 72-16 io1 B / io8 B
MCD 72-16 io1 B / io8 B
1900
1800
MCC 72-18 io1 B / io8 B
MCD 72-18 io1 B / io8 B
© 2004 IXYS All rights reserved
2 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4
1
9
MCC 72
MCD 72
Symbol
Conditions
Characteristic Values
I
RRM
, I
DRM
T
VJ
= T
VJM
; V
R
= V
RRM
; V
D
= V
DRM
5
mA
V
T
/V
F
I
T
/I
F
= 300 A; T
VJ
= 25°C
1.74
V
V
T0
For power-loss calculations only (T
VJ
= 125°C)
0.85
V
r
T
3.2
m
V
GT
V
D
= 6 V;
T
VJ
= 25°C
2.5
V
T
VJ
= -40°C
2.6
V
I
GT
V
D
= 6 V;
T
VJ
= 25°C
150
mA
T
VJ
= -40°C
200
mA
V
GD
T
VJ
= T
VJM
;
V
D
=
2
/
3
V
DRM
0.2
V
I
GD
10
mA
I
L
T
VJ
= 25°C; t
P
= 10 µs; V
D
= 6 V
450
mA
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
I
H
T
VJ
= 25°C; V
D
= 6 V; R
GK
=
200
mA
t
gd
T
VJ
= 25°C; V
D
= ½ V
DRM
2
µs
I
G
= 0.45 A; di
G
/dt = 0.45 A/µs
t
q
T
VJ
= T
VJM
; I
T
= 150 A, t
P
= 200 µs; -di/dt = 10 A/µs typ. 185
µs
V
R
= 100 V; dv/dt = 20 V/µs; V
D
=
2
/
3
V
DRM
Q
S
T
VJ
= T
VJM
; I
T
/I
F
= 50 A, -di/dt = 6 A/µs
170
µC
I
RM
45
A
R
thJC
per thyristor/diode; DC current
0.3
K/W
per module
other values
0.15
K/W
R
thJK
per thyristor/diode; DC current
see Fig. 8/9
0.5
K/W
per module
0.25
K/W
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Maximum allowable acceleration
50
m/s
2
Optional accessories for module-type MCC 72 version 1 B
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red
Type ZY 200L (L = Left for pin pair 4/5)
UL 758, style 1385,
Type ZY 200R (R = right for pin pair 6/7)
CSA class 5851, guide 460-1-1
Dimensions in mm (1 mm = 0.0394")
MCC / MCD Version 1 B
MCC Version 8 B
MCD Version 8 B
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
© 2004 IXYS All rights reserved
3 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4
1
9
MCC 72
MCD 72
Fig. 3 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 4
i
2
dt versus time (1-10 ms)
Fig. 4a Maximum forward current
at case temperature
Fig. 5
Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
© 2004 IXYS All rights reserved
4 - 4
IXYS reserves the right to change limits, test conditions and dimensions
4
1
9
MCC 72
MCD 72
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 9 Transient thermal impedance
junction to
heatsink
(per
thyristor
or diode)
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.008
0.0019
2
0.054
0.047
3
0.238
0.3
Constants for Z
thJK
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.008
0.0019
2
0.054
0.047
3
0.238
0.3
4
0.2
1.25
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
DC
0.5
180°
0.51
120°
0.53
60°
0.55
30°
0.57
R
thJC
for various conduction angles d:
d
R
thJC
(K/W)
DC
0.3
180°
0.31
120°
0.33
60°
0.35
30°
0.37
PDF 
ZIP