© 2006 IXYS All rights reserved
G = Gate
D = Drain
S = Source
TAB = Drain
DS99200E(12/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
° C, unless otherwise specified)
Min. Typ.
Max.
BV
DSS
V
GS
= 0 V, I
D
= 250
µA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 50
µA
3.0
5.5
V
I
GSS
V
GS
=
± 30 V
DC
, V
DS
= 0
±100
nA
I
DSS
V
DS
= V
DSS
5
µA
V
GS
= 0 V
T
J
= 125
° C
50
µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
2.0
Pulse test, t
300 µs, duty cycle d 2 %
PolarHV
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Features
l
International standard packages
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
TO-263 (IXTA)
TO-220 (IXTP)
D
(TAB)
G
S
IXTA 3N50P
IXTP 3N50P
IXTY 3N50P
V
DSS
= 500 V
I
D25
= 3.6 A
R
DS(on)
2.0
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
° C to 150° C
500
V
V
DGR
T
J
= 25
° C to 150° C; R
GS
= 1 M
500
V
V
GSS
±30
V
V
GSM
±40 V
I
D25
T
C
= 25
° C
3.6
A
I
DM
T
C
= 25
° C, pulse width limited by T
JM
8
A
I
AR
T
C
= 25
° C
3
A
E
AR
T
C
= 25
° C
10
mJ
E
AS
T
C
= 25
° C
180
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
10
V/ns
T
J
150° C, R
G
= 20
P
D
T
C
= 25
° C
70
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
T
SOLD
Plastic body for 10 s
260
° C
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-263
3
g
TO-252 0.8 g
TO-252 (IXTY)
G
S
(TAB)
G
S
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
° C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
2.5
3.5
S
C
iss
409
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
48
pF
C
rss
6.1
pF
t
d(on)
15
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
15
ns
t
d(off)
R
G
= 20
(External)
38
ns
t
f
12
ns
Q
g(on)
9.3
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
3.3
nC
Q
gd
3.4
nC
R
thJC
1.8
° C/W
R
thCS
(TO-220)
0.25
° C/W
Source-Drain Diode Characteristic Values
(T
J
= 25
° C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
I
S
V
GS
= 0 V
3
A
I
SM
Repetitive
5
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 µs, duty cycle d 2 %
t
rr
I
F
= 3 A, -di/dt = 100 A/
µs
400
ns
V
R
= 100 V, V
GS
= 0 V
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
Dim. Millimeter
Inches
Min. Max.
Min.
Max.
A
2.19
2.38
0.086
0.094
A1
0.89
1.14
0.035
0.045
A2
0
0.13
0
0.005
b
0.64
0.89
0.025
0.035
b1
0.76
1.14
0.030
0.045
b2
5.21
5.46
0.205
0.215
c
0.46
0.58
0.018
0.023
c1
0.46
0.58
0.018
0.023
D
5.97
6.22
0.235
0.245
D1
4.32
5.21
0.170
0.205
E
6.35
6.73
0.250
0.265
E1
4.32
5.21
0.170
0.205
e
2.28 BSC
0.090 BSC
e1
4.57 BSC
0.180 BSC
H
9.40 10.42
0.370
0.410
L
0.51
1.02
0.020
0.040
L1
0.64
1.02
0.025
0.040
L2
0.89
1.27
0.035
0.050
L3
2.54
2.92
0.100
0.115
TO-252 AA (IXTY) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2
© 2006 IXYS All rights reserved
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 1. Output Characte ris tics
@ 25
º
C
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0
1
2
3
4
5
6
V
D S
- V olts
I
D
-
A
m
per
e
s
V
GS
= 10V
8V
7V
6V
Fig. 2. Exte nde d Output Characte ris tics
@ 25
º
C
0
1
2
3
4
5
6
7
8
0
3
6
9
12
15
18
21
24
27
30
V
D S
- V olts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
6V
Fig. 3. Output Characte r is tics
@ 125
º
C
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
0
2
4
6
8
10
12
V
D S
- V olts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
D S(on
)
Nor m alize d to 0.5 I
D 25
V alue vs . Junction Te m pe ratur e
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
I
D
= 3A
I
D
= 1.5A
V
GS
= 10V
Fig. 5. R
DS(on)
Norm alize d to
0.5 I
D25
V alue vs . I
D
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
1
2
3
4
5
6
7
8
I
D
- A mperes
R
D
S
(
o
n )
- N
o
r
m
a
l
i
z
e
d
T
J
= 125
º
C
T
J
= 25
º
C
V
GS
= 10V
Fig. 6. Drain Curre nt vs . Cas e
Te m pe rature
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
Fig. 7. Input Adm ittance
0
1
2
3
4
5
6
4.5
5
5.5
6
6.5
7
V
G S
- V olts
I
D
-
A
m
per
e
s
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Sour ce Cur r e nt vs .
Sour ce -To-Dr ain V oltage
0
1
2
3
4
5
6
7
8
9
0.5 0.55
0.6 0.65
0.7 0.75
0.8 0.85
0.9 0.95
V
S D
- V olts
I
S
- A
m
p
e
r
e
s
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 10. Gate Char ge
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 250V
I
D
= 1.5A
I
G
= 10m A
Fig. 11. Capacitance
1
10
100
1000
0
5
10
15
20
25
30
35
40
V
D S
- V olts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
C iss
C oss
C rs
f = 1MH z
Fig. 12. For w ar d-Bias
Safe Ope r ating Are a
0.1
1
10
10
100
1000
V
D S
- V olts
I
D
-
A
m
per
es
100µs
1m s
D C
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Lim it
10m s
25µs
© 2006 IXYS All rights reserved
Fig. 13. Maximum Transient Thermal Resistance
0.1
1.0
10.0
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
IXTA 3N50P IXTP 3N50P
IXTY 3N50P
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