© 2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
250
V
V
DGR
T
J
= 25
°C to 150°C; R
GS
= 1 M
250
V
V
GSM
±20
V
I
D25
T
C
= 25
°C
64
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
160
A
I
AR
T
C
= 25
°C
60
A
E
AR
T
C
= 25
°C
40
mJ
E
AS
T
C
= 25
°C
1.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
10
V/ns
T
J
150°C, R
G
= 4
P
D
T
C
= 25
°C
400
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
M
d
Mounting torque
(TO-3P)
1.13/10 Nm/lb.in.
Weight
TO-3P
5.5
g
TO-268
5.0
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99120A(02/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
µA
250
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
µA
2.5
5.0
V
I
GSS
V
GS
=
±20 V
DC
, V
DS
= 0
±100
nA
I
DSS
V
DS
= V
DSS
25
µA
V
GS
= 0 V
T
J
= 125
°C
250
µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
48
m
Pulse test, t
300 µs, duty cycle d 2 %
PolarHT
TM
Power MOSFET
IXTQ 64N25P
V
DSS
= 250 V
IXTT 64N25P
I
D25
= 64 A
R
DS(on)
= 48 m
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
G
S
D (TAB)
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTQ 64N25P
IXTT 64N25P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
22
30
S
C
iss
3450
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
640
pF
C
rss
155
pF
t
d(on)
21
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
23
ns
t
d(off)
R
G
= 4
(External)
60
ns
t
f
20
ns
Q
g(on)
105
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
24
nC
Q
gd
53
nC
R
thJC
0.31 K/W
R
thCK
(TO-3P)
0.21
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
64
A
I
SM
Repetitive
160
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 µs, duty cycle d 2 %
t
rr
I
F
= 25 A
200
ns
-di/dt = 100 A/
µs
Q
RM
V
R
= 100 V
3.0
µC
TO-268 Outline
TO-3P (IXTQ) Outline
© 2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 3. Output Characteristics
@ 125
º
C
0
8
16
24
32
40
48
56
64
0
1
2
3
4
5
6
7
8
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
º
C
0
8
16
24
32
40
48
56
64
0
0.5
1
1.5
2
2.5
3
3.5
4
V
D S
- Volts
I
D
-
A
m
p
e
re
s
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
r
m
a
liz
e
d
I
D
= 64A
I
D
= 32A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
3.7
0
30
60
90
120
150
180
I
D
- Amperes
R
D S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXTQ 64N25P
IXTT 64N25P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXTQ 64N25P
IXTT 64N25P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apa
c
i
t
a
nc
e -
pi
c
o
F
a
r
a
d
s
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
90 100 110
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 125V
I
D
= 32A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
15
30
45
60
75
90
105
120
4
4.5
5
5.5
6
6.5
7
7.5
8
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
0
15
30
45
60
75
90
105
120
135
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
30
60
90
120
150
180
0.4
0.6
0.8
1
1.2
1.4
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
© 2004 IXYS All rights reserved
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
0. 01
0. 10
1. 00
1
10
100
1000
Puls e W idth - millis ec onds
R
( t h ) J
C
-
ºC
/ W
IXTQ 64N25P
IXTT 64N25P
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