© 2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
300
V
V
DGR
T
J
= 25
°C to 150°C; R
GS
= 1 M
300
V
V
GSM
±20
V
I
D25
T
C
= 25
°C
88
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
220
A
I
AR
T
C
= 25
°C
60
A
E
AR
T
C
= 25
°C
60
mJ
E
AS
T
C
= 25
°C
2.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
10
V/ns
T
J
150°C, R
G
= 4
P
D
T
C
= 25
°C
600
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
TO-264
10
g
TO-268
5
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99129A(01/04)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
µA
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
µA
2.5
5.0
V
I
GSS
V
GS
=
±20 V
DC
, V
DS
= 0
±100
nA
I
DSS
V
DS
= V
DSS
25
µA
V
GS
= 0 V
T
J
= 125
°C
250
µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
40
m
Pulse test, t
300 µs, duty cycle d 2 %
PolarHT
TM
Power MOSFET
IXTH 88N30P
V
DSS
= 300 V
IXTT 88N30P
I
D25
= 88 A
R
DS(on)
= 40 m
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
PolarHT
TM
DMOS transistors
utilize proprietary designs and
process. US patent is pending.
TO-268 (IXTT)
G
S
TO-247 (IXTH)
D (TAB)
D (TAB)
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
40
50
S
C
iss
6300
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
950
pF
C
rss
190
pF
t
d(on)
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
24
ns
t
d(off)
R
G
= 3.3
(External)
96
ns
t
f
25
ns
Q
g(on)
180
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
44
nC
Q
gd
90
nC
R
thJC
0.21 K/W
R
thCK
(TO-247)
0.21
K/W
(TO-264)
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
88
A
I
SM
Repetitive
220
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 µs, duty cycle d 2 %
t
rr
I
F
= 25 A
250
ns
-di/dt = 100 A/
µs
Q
RM
V
R
= 100 V
3.3
µC
IXTH 88N30P
IXTT 88N30P
TO-268 Outline
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
TO-247 AD Outline
1 2 3
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
© 2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
e
s
V
GS
= 10V
9V
7V
6V
8V
5V
Fig. 3. Output Characteristics
@ 125
º
C
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
6
7
8
9
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
8V
5V
6V
7V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
0
0.5
1
1.5
2
2.5
3
3.5
4
V
D S
- Volts
I
D
-
A
m
per
e
s
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
on)
-
N
o
rm
a
l
i
z
e
d
I
D
= 88A
I
D
= 44A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
100
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
3.4
0
20
40
60
80
100 120 140 160 180 200
I
D
- Amperes
R
D S
(
o
n
)
-
N
o
rm
a
l
i
z
e
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXTH 88N30P
IXTT 88N30P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100
120
140 160
180
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 150V
I
D
= 44A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
160
4
4.5
5
5.5
6
6.5
7
7.5
8
V
G S
- Volts
I
D
- A
m
p
e
r
e
s
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
140 160
180
I
D
- Amperes
g
f s
-
S
i
e
m
e
n
s
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
40
80
120
160
200
240
280
0.4
0.6
0.8
1
1.2
1.4
1.6
V
S D
- Volts
I
S
-
A
m
p
e
re
s
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
IXTH 88N30P
IXTT 88N30P
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