1 - 4
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
900
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
900
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
12
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
48
A
P
D
T
C
= 25
°
C
300
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
300
°
C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD (IXTH)
MegaMOS
TM
FET
N-Channel Enhancement Mode
TO-204 AA (IXTM)
G = Gate,
D = Drain,
S = Source,
TAB = Drain
G
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
900
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
µ
A
2
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 · V
DSS
T
J
= 25
°
C
250
µ
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.90
Pulse test, t
300
µ
s, duty cycle d
2 %
Features
l
International standard packages
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Low package inductance (< 5 nH)
- easy to drive and to protect
l
Fast switching times
Applications
l
Switch-mode and resonant-mode
power supplies
l
Motor controls
l
Uninterruptible Power Supplies (UPS)
l
DC choppers
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
Space savings
l
High power density
91593E(5/96)
D (TAB)
IXTH 12N90
V
DSS
= 900 V
IXTM 12N90
I
D25
= 12 A
R
DS(on)
= 0.90
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 · I
D25
, pulse test
6
12
S
C
iss
4500
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
315
pF
C
rss
65
pF
t
d(on)
20
50
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 I
D25
33
50
ns
t
d(off)
R
G
= 2
,
(External)
63
100
ns
t
f
32
50
ns
Q
g(on)
145
170
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 I
D25
30
45
nC
Q
g d
55
80
nC
R
thJC
0.42
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
12
A
I
SM
Repetitive;
48
A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
µ
s, duty cycle d
2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
µ
s, V
R
= 100 V
900
ns
IXTH 12N90
IXTM 12N90
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
TO-247 AD (IXTH) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
6.4
11.4
.250
.450
A1
3.42
.135
b
.97
1.09
.038
.043
D
22.22
.875
e
10.67
11.17
.420
.440
e1
5.21
5.71
.205
.225
L
7.93
.312
p
3.84
4.19
.151
.165
p 1 3.84
4.19
.151
.165
q
30.15 BSC
1.187 BSC
R
13.33
.525
R 1
4.77
.188
s
16.64
17.14
.655
.675
TO-204AA (IXTM) Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
Pins
1 - Gate
2 - Source
Case - Drain
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
© 2000 IXYS All rights reserved
IXTH 12N90
IXTM 12N90
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV/
V
G(
t
h
)
- N
o
rm
a
l
i
z
e
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
-
A
m
per
es
0
2
4
6
8
10
12
14
16
18
10N90
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
DS
(
on)
- N
o
rm
a
l
i
z
e
d
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
2
4
6
8 10 12 14 16 18 20 22 24 26
R
DS
(
on)
- N
o
rm
a
l
i
z
e
d
0.9
1.0
1.1
1.2
1.3
1.4
V
GS
= 10V
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
Am
per
es
0
2
4
6
8
10
12
14
16
18
V
DS
- Volts
0
2
4
6
8
10
12
I
D
-
Am
per
es
0
2
4
6
8
10
12
14
16
18
7V
V
GS
= 10V
BV
CES
12N90
I
D
= 6.5A
V
GS
= 15V
8V
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
4 - 4
© 2000 IXYS All rights reserved
IXTH 12N90
IXTM 12N90
V
DS
- Volts
1
10
100
1000
I
D
-
Am
per
e
s
0.1
1
10
Gate Charge - nCoulombs
0
25
50
75
100
125
150
V
GE
- V
o
l
t
s
0
2
4
6
8
10
V
SD
- Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
-
Am
per
es
0
2
4
6
8
10
12
14
16
18
V
CE
- Volts
0
5
10
15
20
25
C
a
p
a
ci
t
anc
e -
pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Ther
m
a
l
R
e
spons
e -
K/
W
0.001
0.01
0.1
1
C
rss
C
oss
V
DS
= 450V
I
D
= 13A
I
G
= 10mA
100ms
10ms
1ms
100µs
10µs
Limited by R
DS(on)
C
iss
D=0.5
D=0.2
Single Pulse
f = 1 MHz
V
DS
= 25V
T
J
= 125°C
T
J
= 25°C
D=0.01
D=0.02
D=0.05
D=0.1
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
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