© 2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 175°C
600
V
V
DGR
T
J
= 25
°C to 175°C; R
GS
= 1 M
600
V
V
GS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C
= 25
°C
7
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
14
A
I
AR
T
C
= 25
°C
7
A
E
AR
T
C
= 25
°C
20
mJ
E
AS
T
C
= 25
°C
400
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
10
V/ns
T
J
150°C, R
G
= 10
P
D
T
C
= 25
°C
150
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°C
Maximum tab temperature for soldering
260
°C
TO-263 package for 10s
M
d
Mounting torque
(TO-220)
1.13/10 Nm/lb.in.
Weight
TO-220
4
g
TO-263
3
g
G = Gate
D = Drain
S = Source
TAB = Drain
DS99320(06/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
µA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
µA
3
5.5
V
I
GSS
V
GS
=
±30 V
DC
, V
DS
= 0
±100
nA
I
DSS
V
DS
= V
DSS
5
µA
V
GS
= 0 V
T
J
= 125
°C
50
µA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
1.1
Pulse test, t
300 µs, duty cycle d 2 %
PolarHV
TM
Power MOSFET
Advance Technical Information
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
TO-263 (IXTA)
TO-220 (IXTP)
D
(TAB)
G
S
G
S
(TAB)
IXTA 7N60P
IXTP 7N60P
V
DSS
= 600 V
I
D25
= 7 A
R
DS(on)
1.1
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 7N60P
IXTP 7N60P
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
4
7
S
C
iss
1080
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
110
pF
C
rss
11
pF
t
d(on)
20
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
22
ns
t
d(off)
R
G
= 50
(External)
55
ns
t
f
20
n s
Q
g(on)
20
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
7
nC
Q
gd
7
nC
R
thJC
0.83 K/W
R
thCK
(TO-220)
0.25
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
7
A
I
SM
Repetitive
14
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 µs, duty cycle d 2 %
t
rr
I
F
= 7 A
500
ns
-di/dt = 100 A/
µs
Pins: 1 - Gate
2 - Drain
3 - Source
4 - Drain
TO-220 (IXTP) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
© 2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
14
0
3
6
9
12
15
18
21
24
27
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
5V
7V
6V
Fig. 3. Output Characteristics
@ 125
º
C
0
1
2
3
4
5
6
7
0
2
4
6
8
10
12
14
16
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
º
C
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
8
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
6V
5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o
n )
-
N
o
r
m
ali
z
ed
I
D
= 7A
I
D
= 3.5A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
1
2
3
4
5
6
7
8
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
0
2
4
6
8
10
12
14
I
D
- Amperes
R
D
S
(
o n )
-
No
r
m
aliz
ed
T
J
= 125
C
T
J
= 25
C
V
GS
= 10V
IXTA 7N60P
IXTP 7N60P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 7N60P
IXTP 7N60P
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Fig. 11. Capacitance
1
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
it
anc
e
-
pic
o
F
a
r
a
ds
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
2
4
6
8
10
12
14
16
18
20
22
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 300V
I
D
= 3.5A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
1
2
3
4
5
6
7
8
9
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
-
A
m
per
es
T
J
=125
C
25
C
-40
C
Fig. 8. Transconductance
0
1
2
3
4
5
6
7
8
9
10
11
12
0
1
2
3
4
5
6
7
8
9
10
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
C
25
C
125
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
2
4
6
8
10
12
14
16
18
20
0.4
0.5
0.6
0.7
0.8
0.9
1
V
S D
- Volts
I
S
-
A
m
per
e
s
T
J
= 125
C
T
J
= 25
C
Fig. 12. Maximum Transient Therm al
Resistance
0.10
1.00
0.001
0.01
0.1
1
10
Pulse Width - Seconds
R
( t
h
) J
C
-
C /
W
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