1 - 2
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
800
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
800
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
2
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
8
A
I
AR
2
A
E
AR
T
C
= 25
°
C
6
mJ
E
AS
T
C
= 25
°
C
200
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
,
5
V/ns
T
J
150
°
C, R
G
= 18
P
D
T
C
= 25
°
C
54
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
4
g
Maximum lead temperature for soldering
300
°
C
High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
G = Gate,
D = Drain,
S = Source,
TAB = Drain
D (TAB)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
µ
A
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
µ
A
2.5
5.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
25
µ
A
V
GS
= 0 V
T
J
= 125
°
C
500
µ
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
6.2
Pulse test, t
300
µ
s, duty cycle d
2 %
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Low package inductance (< 5 nH)
- easy to drive and to protect
Fast switching times
Applications
Switch-mode and resonant-mode
power supplies
Flyback inverters
DC choppers
Advantages
Space savings
High power density
98541A 03/24/00
G D
S
TO-220AB (IXTP)
G
S
TO-263 AA (IXTA)
D (TAB)
V
DSS
= 800 V
I
D25
= 2 A
R
DS(on)
= 6.2
Advanced Technical Information
IXTA 2N80
IXTP 2N80
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 0.5 · I
D25
, pulse test
1.0
2.0
S
C
iss
440
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
56
pF
C
rss
15
pF
t
d(on)
15
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 I
D25
18
ns
t
d(off)
R
G
= 18
,
(External)
30
ns
t
f
15
ns
Q
g(on)
22
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 I
D25
5.5
nC
Q
gd
12
nC
R
thJC
2.3
K/W
R
thCK
(IXTP)
0.5
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
2
A
I
SM
Repetitive; pulse width limited by T
JM
8
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.8
V
Pulse test, t
300
µ
s, duty cycle d
2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
µ
s, V
R
= 100 V
510
ns
TO-263 AA (IXTA) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-220 AB (IXTP) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
12.70
13.97
0.500
0.550
B
14.73
16.00
0.580
0.630
C
9.91
10.66
0.390
0.420
D
3.54
4.08
0.139
0.161
E
5.85
6.85
0.230
0.270
F
2.54
3.18
0.100
0.125
G
1.15
1.65
0.045
0.065
H
2.79
5.84
0.110
0.230
J
0.64
1.01
0.025
0.040
K
2.54
BSC
0.100
BSC
M
4.32
4.82
0.170
0.190
N
1.14
1.39
0.045
0.055
Q
0.35
0.56
0.014
0.022
R
2.29
2.79
0.090
0.110
IXTA 2N80
IXTP 2N80
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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