1 - 5
© 2000 IXYS All rights reserved
TO-247AD
(IXSH)
G
C
E
G = Gate
C = Collector
E = Emitter
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°
C to 150
°
C
600
V
V
CGR
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
±
20
V
V
GEM
Transient
±
30
V
I
C25
T
C
= 25
°
C
55
A
I
C90
T
C
= 90
°
C
30
A
I
CM
T
C
= 25
°
C, 1 ms
110
A
SSOA
V
GE
= 15 V, T
J
= 125
°
C, R
G
= 10
W
I
CM
= 60
A
(RBSOA)
Clamped inductive load, V
CL
= 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
°
C
10
m
s
(SCSOA)
R
G
= 33
W,
non repetitive
P
C
T
C
= 25
°
C
200
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Maximum lead temperature for soldering
300
°
C
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247/TO-268
6/4
g
TO-264
10
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750
m
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 2.5 mA, V
CE
= V
GE
4
7
V
I
CES
V
CE
= 0.8 · V
CES
T
J
= 25
°
C
200
m
A
V
GE
= 0 V
T
J
= 125
°
C
3
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
V
GE
= 15 V
I
C
= I
C90
2.0
V
I
C
= I
C25
2.7
V
Features
· International standard packages:
JEDEC TO-247, TO-264& TO-268
· Short Circuit SOA capability
· Medium freqeuncy IGBT and anti-
parallel FRED in one package
· New generation HDMOS
TM
process
Applications
· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninterruptible power supplies (UPS)
· Switch-mode and resonant-mode
power supplies
Advantages
· Space savings (two devices in one
package)
· Easy to mount with 1 screw
(isolated mounting screw hole)
· Surface mountable, high power case
style
· Reduces assembly time and cost
· High power density
98517A (7/00)
TO-268 (D3)
(IXST)
G
C
E
G
C
E
TO-264
(IXSK)
IXSH 30N60BD1
IXSK 30N60BD1
IXST 30N60BD1
High Speed IGBT with Diode
Short Circuit SOA Capability
V
CES
=
600 V
I
C25
=
55 A
V
CE(sat)
=
2.0 V
t
fi
= 140 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 5
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
10
S
Pulse test, t
£
300
m
s, duty cycle
£
2 %
C
ies
3100
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
pF
C
res
30
pF
Q
g
100
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
30
nC
Q
gc
38
nC
t
d(on)
30
ns
t
ri
30
ns
t
d(off)
150
270
ns
t
fi
140
270
ns
E
off
1.5
2.5
mJ
t
d(on)
30
ns
t
ri
35
ns
E
on
0.5
mJ
t
d(off)
270
ns
t
fi
250
ns
E
off
2.5
mJ
R
thJC
0.62 K/W
R
thCK
TO-247
0.25
K/W
R
thCK
TO-264
0.15
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V
T
J
= 150 °C
1.7
V
Note 2
T
J
= 25 °C
2.5
V
I
RM
I
F
= 50A; V
GE
= 0 V; T
J
= 100
°
C
2
2.5
A
V
R
= 100 V; -di
F
/dt = 100 A/
m
s
t
rr
I
F
= 1 A; -di/dt = 100 A/
m
s; V
R
= 30 V
T
J
= 25
°
C
35
50
ns
R
thJC
.09 K/W
Inductive load, T
J
= 125
°
C
I
C
= I
C90
; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= 4.7
W
Note 1
Inductive load, T
J
= 25
°
C
I
C
= I
C90
; V
GE
= 15 V
V
CE
= 0.8 V
CES
; R
G
= 4.7
W
Note 1.
Notes: 1. Switching times may increase for V
CE
(Clamp) > 0.8 · V
CES
, higher T
J
or increased R
G
.
2. Pulse test, t
£
300
m
s, duty cycle d
£
2 %
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
TO-268AA (IXST) (D
3
PAK)
Min. Recommended Footprint
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA (IXSK) Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 5
© 2000 IXYS All rights reserved
V
CE
-Volts
0
5
10
15
20
25
30
35
40
C
a
pa
ci
ta
nce
- p
F
10
100
1000
10000
T
J
- Degrees C
25
50
75
100
125
150
V
CE
(
s
a
t
)
-
Nor
m
aliz
ed
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
- Volts
0
1
2
3
4
5
I
C
- A
m
pe
re
s
0
20
40
60
80
100
V
GE
- Volts
4
6
8
10
12
14
16
I
C
- A
m
pe
r
e
s
0
20
40
60
80
100
120
140
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
pe
re
s
0
40
80
120
160
200
13V
11V
9V
7V
V
CE
= 10V
T
J
= 25°C
V
GE
= 15V
T
J
= 25°C
I
C
= 15A
I
C
= 30A
I
C
= 60A
T
J
=
125°C
C
rss
f = 1Mhz
7V
5V
V
GE
= 15V
T
J
= 25°C
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
pe
r
e
s
0
20
40
60
80
100
120
T
J
= 125°C
C
iss
C
oss
V
GE
= 15V
7V
9V
11V
13V
V
GS
=15V
9V
11V
13V
Fig.3 Collector-Emitter Voltage
Fig.4 Temperature Dependence
vs. Gate-Emitter Voltage
of Output Saturation Voltage
Fig.5 Input Admittance
Fig.6 Temperature Dependence of
Breakdown and Threshold Voltage
Fig.1 Saturation Characteristics
Fig.2 Output Characterstics
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
4 - 5
© 2000 IXYS All rights reserved
Fig.11 Transient Thermal Resistance
Fig.9 Gate Charge Characteristic Curve
Fig.10 Turn-Off Safe Operating Area
Fig.7 Turn-Off Energy per Pulse and
Fig.8 Dependence of Turn-Off Energy
Fall Time on Collector Current
Per Pulse and Fall Time on R
G
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
thJ
C
(K
/W)
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- Am
p
e
re
s
0.1
1
10
100
Q
g
- nanocoulombs
0
25
50
75
100
125
V
GE
- V
o
l
t
s
0
3
6
9
12
15
R
G
- Ohms
0
10
20
30
40
50
E
(O
FF)
- mi
ll
ijo
ule
s
0
2
4
6
8
E
(O
N
)
-
mi
ll
ij
o
u
l
e
s
0.0
0.5
1.0
1.5
2.0
T
J
= 125°C
I
C
- Amperes
0
20
40
60
80
E
(O
FF)
-
mi
ll
iJ
ou
le
s
0.0
2.5
5.0
7.5
E
(O
N)
-
m
i
l
l
i
j
oul
es
0.0
0.5
1.0
1.5
V
CE
= 300V
I
C
= 30A
I
C
=30A
E
(ON)
E
(OFF)
E
(OFF)
E
(OFF)
T
J
= 125°C
R
G
= 4.7
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10
T
J
= 125°C
I
C
= 60A
I
C
= 15A
E
(OFF)
E
(ON)
E
(ON)
E
(ON)
5 - 5
© 2000 IXYS All rights reserved
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
200
600
1000
0
400
800
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
1000
0
1
2
3
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
m
s
A
V
nC
A/
m
s
A/
m
s
t
rr
ns
t
fr
Z
thJC
A/
m
s
µ
s
DSEP 29-06
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
I
F
= 30A
Fig. 14 Peak reverse current I
RM
versus -di
F
/dt
Fig. 13 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 12 Forward current I
F
versus V
F
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 15 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 16 Recovery time t
rr
versus -di
F
/dt
Fig. 17 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 18 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
3
0.205
0.0162
T
VJ
=25°C
T
VJ
=100°C
T
VJ
=150°C
PDF 
ZIP