1 - 2
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°
C to 150
°
C
1200
V
V
CGR
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
W
1200
V
V
GES
Continuous
±
20
V
V
GEM
Transient
±
30
V
I
C25
T
C
= 25
°
C
70
A
I
C90
T
C
= 90
°
C
35
A
I
CM
T
C
= 25
°
C, 1 ms
140
A
SSOA
V
GE
= 15 V, T
J
= 125
°
C, R
G
= 22
W
I
CM
= 70
A
(RBSOA)
Clamped inductive load, L = 30
m
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 720 V, T
J
= 125
°
C
10
m
s
(SCSOA)
R
G
= 22
W,
non repetitive
P
C
T
C
= 25
°
C
IGBT
300
W
Diode
190
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
M
d
Mounting torque
1.15/13
Nm/lb.in.
Weight
10
g
Features
· International standard package
JEDEC TO-264 AA
· High frequency IGBT and anti-parallel
FRED in one package
· 2nd generation HDMOS
TM
process
· Low V
CE(sat)
- for minimum on-state conduction
losses
· MOS Gate turn-on
- drive simplicity
· Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
· AC motor speed control
· DC servo and robot drives
· DC choppers
· Uninterruptible power supplies (UPS)
· Switch-mode and resonant-mode
power supplies
Advantages
· Space savings (two devices in one
package)
· Easy to mount with one screw
(isolated mounting screw hole)
· High power density
TO-264 AA
G
C
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
C (TAB)
High Voltage
IGBT with Diode
Combi Pack
Short Circuit SOA Capability
V
CES
= 1200 V
I
C25
=
70 A
V
CE(sat)
=
4 V
94526F(7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 5 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 · V
CES
T
J
= 25
°
C
750
m
A
V
GE
= 0 V
T
J
= 125
°
C
15
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4
V
IXSK35N120AU1
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
20
26
S
Pulse test, t
£
300
m
s, duty cycle
£
2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
170
A
C
ies
3900
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
295
pF
C
res
60
pF
Q
g
150
190
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
40
60
nC
Q
gc
70
100
nC
t
d(on)
80
ns
t
ri
150
ns
t
d(off)
400
900
ns
t
fi
500
700
ns
E
off
Note 1
10
mJ
t
d(on)
80
ns
t
ri
150
ns
E
on
8
mJ
t
d(off)
400
ns
t
fi
700
ns
E
off
15
mJ
R
thJC
0.42 K/W
R
thCK
0.15
K/W
Note 1
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= 2.7
W
IXSK 35N120AU1 characteristic curves are located in the IXSH 35N120A data
sheet, Publication No. D96001DE, pages 66 - 67.
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V, Pulse test,
2.35
V
t
£
300
m
s, duty cycle d
£
2 %, T
J
= 125
°
C
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 480 A/
m
s
32
36
A
t
rr
V
R
= 540 V
T
J
= 100
°
C
225
ns
I
F
= 1 A; -di/dt = 200 A/
m
s; V
R
= 30 V
T
J
= 25
°
C
40
60
ns
R
thJC
0.65 K/W
Inductive load, T
J
= 25
°
C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
m
H, V
CE
= 0.8 V
CES
, R
G
= 2.7
W
IXSK35N120AU1
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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