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G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°
C to 150
°
C
600
V
V
CGR
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
V
GES
Continuous
±
20
V
V
GEM
Transient
±
30
V
I
C25
T
C
= 25
°
C, limited by leads
75
A
I
C90
T
C
= 90
°
C
50
A
I
CM
T
C
= 25
°
C, 1 ms
200
A
SSOA
V
GE
= 15 V, T
VJ
= 125
°
C, R
G
= 22
I
CM
= 100
A
(RBSOA)
Clamped inductive load, L = 30
µ
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
°
C
10
µ
s
(SCSOA)
R
G
= 22
,
non repetitive
P
C
T
C
= 25
°
C
250
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247 SMD
4
g
TO-247
6
g
Maximum lead temperature for soldering
300
°
C
1.6 mm (0.062 in.) from case for 10 s
IGBT High Speed
V
`bp
= 600 V
I
`OR
= 75 A
Short Circuit SOA Capability
V
`bEë~íF
= 2.5 V
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
µ
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 4 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 · V
CES
T
J
= 25
°
C
200
µ
A
V
GE
= 0 V
T
J
= 125
°
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
; V
GE
= 15 V
2.2
2.5
V
VTROQ_= EQLVVF
mêÉäáãáå~êó=Ç~í~=ëÜÉÉí
TO-247 AD
G
C
E
`=Eq^_F
Features
International standard package
JEDEC TO-247 AD, and
TO-247 SMD for surface mount
Guaranteed Short Circuit SOA
capability
High frequency IGBT
Latest generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with 1 screw
(isolated mounting screw hole)
Reduces assembly time and cost
High power density
IXSH 50N60B
fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW
QIUPRIRVO
QIUUNINMS
RIMNTIRMU
RIMQVIVSN
RINUTINNT
RIQUSITNR
QIURMIMTO
QIVPNIUQQ
RIMPQITVS
RIMSPIPMT
RIOPTIQUN
RIPUNIMOR
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
16
23
S
Pulse test, t
300
µ
s, duty cycle
2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
160
A
C
ies
3850
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
440
pF
C
res
50
pF
Q
g
167
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
45
nC
Q
gc
88
nC
t
d(on)
70
ns
t
ri
70
ns
t
d(off)
150
300
ns
t
fi
150
300
ns
E
off
3.3
6.0 mJ
t
d(on)
70
ns
t
ri
70
ns
E
on
0.6
mJ
t
d(off)
230
ns
t
fi
230
ns
E
off
4.8
mJ
R
thJC
0.5 K/W
R
thCK
0.25
K/W
Inductive load, T
J
= 25
°°
°°
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
µ
H,
V
CE
= 0.8 V
CES
, R
G
= 2.7
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 · V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
°°
°°
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
µ
H
V
CE
= 0.8 V
CES
, R
G
= 2.7
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 · V
CES
, higher T
J
or
increased R
G
TO-247 AD Outline
m
É
aáãK
jáääáãÉíÉê
fåÅÜÉë
jáåK
j~ñK
jáåK
j~ñK
^
QKT
RKP
KNUR
KOMV
^
N
OKO
OKRQ
KMUT
KNMO
^
O
OKO
OKS
KMRV
KMVU
Ä
NKM
NKQ
KMQM
KMRR
Ä
N
NKSR
OKNP
KMSR
KMUQ
Ä
O
OKUT
PKNO
KNNP
KNOP
`
KQ
KU
KMNS
KMPN
a
OMKUM
ONKQS
KUNV
KUQR
b
NRKTR
NSKOS
KSNM
KSQM
É
RKOM
RKTO
MKOMR
MKOOR
i
NVKUN
OMKPO
KTUM
KUMM
iN
QKRM
KNTT
m
PKRR
PKSR
KNQM
KNQQ
n
RKUV
SKQM
MKOPO
MKORO
o
QKPO
RKQV
KNTM
KONS
p
SKNR _p`
OQO _p`
IXSH 50N60B
«=NVVV=fuvp=^ää=êáÖÜíë=êÉëÉêîÉÇ
Figure 1. Saturation Voltage Characteristics
Figure 2. Extended Output Characteristics
Figure 3. Saturation Voltage Characteristics
Figure 4. Temperature Dependence of V
CE(sat)
Figure 5. Admittance Curves
Figure 6. Capacitance Curves
V
GE
- Volts
4
6
8
10
12
14
16
I
C
- A
m
p
e
res
0
20
40
60
80
100
V
CE
-Volts
0
5
10
15
20
25
30
35
40
C
a
pac
i
t
a
nc
e -
pF
10
100
1000
10000
T
J
- Degrees C
25
50
75
100
125
150
V
C
E
(
sat
)
-
No
r
m
a
liz
e
d
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
CE
- Volts
0
2
4
6
8
10
I
C
-
A
m
p
e
r
e
s
0
20
40
60
80
100
V
CE
- Volts
0
4
8
12
16
20
I
C
-
A
m
p
e
re
s
0
40
80
120
160
13V
11V
9V
V
CE
= 10V
T
J
= 25°C
V
GE
= 15V
T
J
= 25°C
I
C
= 25A
I
C
= 50A
I
C
= 100A
T
J
=
125°C
C
rss
f = 1Mhz
9V
V
GE
= 15V
T
J
= 25°C
V
CE
- Volts
0
2
4
6
8
10
I
C
- A
m
p
e
re
s
0
20
40
60
80
100
T
J
= 125°C
C
iss
C
oss
7V
9V
11V
7V
13V
V
GE
= 15V
13V
11V
V
GE
= 15V
IXSH 50N60B
fuvp=jlpcbqp=~åÇ=fd_që=~êÉ=ÅçîÉêÉÇ=Äó=çåÉ=çê=ãçêÉ=çÑ=íÜÉ=ÑçääçïáåÖ=rKpK=é~íÉåíëW
QIUPRIRVO
QIUUNINMS
RIMNTIRMU
RIMQVIVSN
RINUTINNT
RIQUSITNR
QIURMIMTO
QIVPNIUQQ
RIMPQITVS
RIMSPIPMT
RIOPTIQUN
RIPUNIMOR
IXYS reserves the right to change limits, test conditions, and dimensions.
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area
Figure 11. Transient Thermal Resistance
Figure 7. Dependence of E
ON
and E
OFF
on I
C
.
Figure 8. Dependence of E
ON
and E
OFF
on
R
G
.
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
th
JC
(K
/
W
)
0.001
0.01
0.1
1
D=0.02
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- A
m
per
e
s
0.1
1
10
100
Q
g
- nanocoulombs
0
25
50
75
100
125
150
175
0
4
8
12
16
20
R
G
- Ohms
0
10
20
30
40
50
60
E
(
O
FF)
-
mill
ijou
l
es
0
5
10
15
20
E
(ON
)
-
milli
joul
es
0
1
2
3
4
I
C
- Amperes
0
20
40
60
80
100
E
(
O
FF)
-
m
i
lli
Joules
0
4
8
12
16
20
24
E
(O
N
)
-
mill
ijou
l
es
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
CE
= 250V
I
C
=50A
E
(ON)
E
(OFF)
E
(ON)
E
(OFF)
T
J
= 125°C
R
G
= 6.2
dV/dt < 5V/ns
D=0.1
D=0.05
Single pulse
D = Duty Cycle
T
J
= 125°C
R
G
= 10
600
E
(OFF)
E
(OFF)
D=0.2
D=0.5
D=0.01
I
C
=25A
T
J
= 125°C
I
C
= 100A
I
C
= 50A
E
(ON)
E
(ON)
IXSH 50N60B
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