© 1998 IXYS All rights reserved
TO-247 AD (IXSH)
V
CES
I
C25
V
CE(sat)
600 V
50 A 2.5 V
600 V
50 A 3.0 V
G
C
E
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°
C to 150
°
C
600
V
V
CGR
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
V
GES
Continuous
±
20
V
V
GEM
Transient
±
30
V
I
C25
T
C
= 25
°
C
50
A
I
C90
T
C
= 90
°
C
30
A
I
CM
T
C
= 25
°
C, 1 ms
100
A
SSOA
V
GE
= 15 V, T
J
= 125
°
C, R
G
= 4.7
I
CM
= 60
A
(RBSOA)
Clamped inductive load, L = 100
µ
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
°
C
10
µ
s
(SCSOA)
R
G
= 33
,
non repetitive
P
C
T
C
= 25
°
C
200
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
300
°
C
1.6 mm (0.062 in.) from case for 10 s
TO-204 AE (IXSM)
C
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Features
l
International standard packages
l
Guaranteed Short Circuit SOA
capability
l
Low V
CE(sat)
- for low on-state conduction losses
l
High current handling capability
l
MOS Gate turn-on
- drive simplicity
l
Fast Fall Time for switching speeds
up to 20 kHz
Applications
l
AC motor speed control
l
Uninterruptible power supplies (UPS)
l
Welding
Advantages
l
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ. max.
BV
CES
I
C
= 250
µ
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 2.5 mA, V
CE
= V
GE
5
8
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
°
C
100
µ
A
V
GE
= 0 V
T
J
= 125
°
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
30N60
2.5
V
30N60A
3.0
V
91549H (9/98)
IXSH/IXSM 30N60
IXSH/IXSM 30N60A
Low V
CE(sat)
IGBT
High Speed IGBT
Short Circuit SOA Capability
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072 4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXSH 30N60
IXSM 30N60
IXSH 30N60A IXSM 30N60A
TO-247 AD Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
7
13
S
Pulse test, t
300
µ
s, duty cycle
2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
100
A
C
ies
2760
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
240
pF
C
res
51
pF
Q
g
110
150 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
34
45 nC
Q
gc
47
63 nC
t
d(on)
60
ns
t
ri
130
ns
t
d(off)
400
ns
t
fi
30N60
400
ns
30N60A
200
ns
E
off
30N60
5.0
mJ
30N60A
2.5
mJ
t
d(on)
60
ns
t
ri
130
ns
E
on
1.0
mJ
t
d(off)
30N60
540 1000 ns
30N60A
340
525 ns
t
fi
30N60
600 1500 ns
30N60A
340
700 ns
E
off
30N60
12
mJ
30N60A
6
mJ
R
thJC
0.63 K/W
R
thCK
0.25
K/W
IXSH 30N60 and IXSH 30N60A characteristic curves are located on the
IXSH 30N60U1 and IXSH 30N60AU1 data sheets.
TO-204AE Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
1 = Gate
2 = Emitter
Case = Collector
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 100
µ
H
V
CE
= 0.8 V
CES
, R
G
= 4.7
Remarks: Switching times
may increase for
V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V,
L = 100
µ
H
V
CE
= 0.8 V
CES
,
R
G
= 4.7
Remarks: Switching times
may increase for
V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
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