© 2002 IXYS All rights reserved
98564A (06/02)
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25°C to 150°C
600
V
V
CGR
T
J
= 25°C to 150°C; R
GE
= 1 M
600
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C
= 25°C
14
A
I
C90
T
C
= 90°C
7
A
I
CM
T
C
= 25°C, 1 ms
30
A
SSOA
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 22
I
CM
= 14
A
(RBSOA)
Clamped inductive load, L = 300
µ
H
@ 0.8 V
CES
P
C
T
C
= 25°C
54
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, (TO-220) M3
0.45/4 Nm/lb.in.
M3.5
0.55/5 Nm/lb.in.
Weight
TO-220
4
g
TO-263
2
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
µ
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
µ
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 · V
CES
T
J
= 25°C
100
µ
A
V
GE
= 0 V
T
J
= 125°C
500
µ
A
I
GES
V
CE
= 0 V, V
GE
= ±20 V
±100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.0
2.7
V
Features
·
International standard packages
JEDEC TO-263 surface
mountable and JEDEC TO-220 AB
·
High frequency IGBT
·
High current handling capability
·
HiPerFAST
TM
HDMOS
TM
process
·
MOS Gate turn-on
- drive simplicity
Applications
·
Uninterruptible power supplies (UPS)
·
Switched-mode and resonant-mode
power supplies
·
AC motor speed control
·
DC servo and robot drives
·
DC choppers
Advantages
·
High power density
·
Suitable for surface mounting
·
Very low switching losses for high
frequency applications
V
CES
= 600 V
I
C25
= 14 A
V
CE(sat)
= 2.7 V
t
fi
= 45 ns
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
HiPerFAST
TM
IGBT
Lightspeed
TM
Series
IXGA 7N60C
IXGP 7N60C
G
E
C (TAB)
TO-263 AA (IXGA)
G C
E
TO-220AB (IXGP)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
3
7
S
Pulse test, t
300
µ
s, duty cycle
2 %
C
ies
500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
50
pF
C
res
17
pF
Q
g
25
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
5
nC
Q
gc
10
nC
t
d(on)
9
ns
t
ri
10
ns
E
on
0.07
mJ
t
d(off)
65
130
ns
t
fi
45
110
ns
E
off
0.12
0.25 mJ
t
d(on)
10
ns
t
ri
15
ns
E
on
0.07
mJ
t
d(off)
120
ns
t
fi
85
ns
E
off
0.22
mJ
R
thJC
2.3 K/W
R
thCK
(TO-220)
0.25
K/W
Inductive load, T
J
= 25°C
I
C
= I
C90
, V
GE
= 15 V, L = 300
µ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 22
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 · V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125°C
I
C
= I
C90
, V
GE
= 15 V, L = 300
µ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 22
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 · V
CES
,
higher T
J
or increased R
G
TO-220 AB Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
12.70
13.97
0.500
0.550
B
14.73
16.00
0.580
0.630
C
9.91
10.66
0.390
0.420
D
3.54
4.08
0.139
0.161
E
5.85
6.85
0.230
0.270
F
2.54
3.18
0.100
0.125
G
1.15
1.65
0.045
0.065
H
2.79
5.84
0.110
0.230
J
0.64
1.01
0.025
0.040
K
2.54
BSC
0.100
BSC
M
4.32
4.82
0.170
0.190
N
1.14
1.39
0.045
0.055
Q
0.35
0.56
0.014
0.022
R
2.29
2.79
0.090
0.110
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 AA Outline
Pins:
1 - Gate
2 - Collector
3 - Emitter
4 - Collector
Bottom Side
Min. Recommended Footprint
(Dimensions in inches and mm)
IXGA 7N60C
IXGP 7N60C
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