1 - 2
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
300
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
W
300
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C, Chip capability
52
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
208
A
I
AR
T
C
= 25
°
C
52
A
E
AR
T
C
= 25
°
C
30
mJ
E
AS
T
C
= 25
°
C
1.5
J
dv/dt
I
S
£
I
DM
, di/dt
£
100 A/
m
s, V
DD
£
V
DSS
,
5
V/ns
T
J
£
150
°
C, R
G
= 2
W
P
D
T
C
= 25
°
C
360
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
M
d
Mounting torque
TO-247
1.13/10 Nm/lb.in.
TO-264
0.9/6 Nm/lb.in.
Weight
TO-247
6
g
TO-264
10
g
TO-268
4
g
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Low Gate Charge and Capacitances
Features
· Low gate charge
· International standard packages
· Epoxy
meet
UL
94
V-0, flammability
classification
· Low R
DS (on)
HDMOS
TM
process
· Rugged polysilicon gate cell structure
· Avalanche energy and current rated
· Fast intrinsic Rectifier
Advantages
· Easy to mount
· Space savings
· High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2
4
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
200
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°
C
50
m
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 · I
D25
60 m
W
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
G = Gate
S = Source
TAB = Drain
98522B (7/00)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
= 300 V
I
D25
= 52 A
R
DS(on)
= 60 m
W
t
rr
£
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 52N30Q
IXFK 52N30Q
IXFT 52N30Q
Preliminary data
2 - 2
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 · I
D25
, pulse test
22
35
S
C
iss
5300
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1010
pF
C
rss
200
pF
t
d(on)
27
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
60
ns
t
d(off)
R
G
= 1.5
W
(External),
80
ns
t
f
25
ns
Q
g(on)
150
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
34
nC
Q
gd
75
nC
R
thJC
0.35
K/W
R
thCK
TO-247
0.25
K/W
TO-264
0.15
K/W
I
F
= I
S
-di/dt = 100 A/
m
s, V
R
= 100 V
IXFH 52N30Q IXFK 52N30Q
IXFT 52N30Q
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
52
A
I
SM
Repetitive; pulse width limited by T
JM
208
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
t
rr
250
ns
Q
RM
1
m
C
I
RM
8
A
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
TO-264 AA Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
TO-268AA (D
3
PAK)
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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