© 2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
500
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
30N50Q
30
A
32N50Q
32
A
I
DM
T
C
= 25
°
C,
30N50Q
120
A
32N50Q
128
A
pulse width limited by T
JM
I
AR
T
C
= 25
°
C
32
A
E
AR
T
C
= 25
°
C
45
mJ
E
AS
1500
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
,
5
V/ns
T
J
150
°
C, R
G
= 2
P
D
T
C
= 25
°
C
416
W
T
J
-55 ... + 150
°
C
T
JM
150
°
C
T
stg
-55 ... + 150
°
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
g
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250 uA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°
C
100
µ
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
32N50Q
0.15
Note 1
30N50Q
0.16
HiPerFET
TM
Power MOSFETs
Q-Class
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
D = Drain
S = Source
TAB = Drain
S
G
D
(TAB)
TO-264 AA (IXFK)
98604D (06/02)
V
DSS
I
D25
R
DS(on)
500
V
30
A 0.16
500
V
32
A 0.15
t
rr
250 ns
IXFK/IXFX 30N50Q
IXFK/IXFX 32N50Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 · I
D25
Note 1
18
28
S
C
iss
3950
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
640
pF
C
rss
210
pF
t
d(on)
35
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
42
ns
t
d(off)
R
G
= 2
(External),
75
ns
t
f
20
ns
Q
g(on)
150
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
26
nC
Q
gd
85
nC
R
thJC
0.3
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
32
A
I
SM
Repetitive;
128
A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
250
ns
Q
RM
0.75
µ
C
I
RM
7.5
A
I
F
= 25A, -di/dt = 100 A/
µ
s, V
R
= 100 V
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81
20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
Note: 1. Pulse test, t
300
µ
s, duty cycle d
2 %
IXFK 30N50Q
IXFK 32N50Q
IXFX 30N50Q
IXFX 32N50Q
TO-264 AA Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
© 2002 IXYS All rights reserved
T
C
- Degrees C
-50 -25
0
25
50
75 100 125 150
I
D
-
A
m
p
e
r
e
s
0
8
16
24
32
40
V
GS
- Volts
2
3
4
5
6
I
D
-
A
m
pe
r
e
s
0
10
20
30
40
50
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(O
N
)
-
N
o
r
m
a
l
i
z
e
d
0.8
1.2
1.6
2.0
2.4
2.8
I
D
= 16A
V
DS
- Volts
0
4
8
12
16
20
I
D
-
A
m
pe
r
e
s
0
10
20
30
40
50
V
DS
- Volts
0
4
8
12
16
20
I
D
-
A
m
pe
r
e
s
0
10
20
30
40
50
60
70
80
5V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
T
J
= 125
o
C
6V
5V
6V
V
GS
=10V
9V
8V
7V
V
GS
= 9V
8V
7V
I
D
= 32A
T
J
= 25
o
C
I
D
- Amperes
0
10
20
30
40
50
60
R
DS
(
O
N)
-
N
o
rmali
z
ed
0.8
1.2
1.6
2.0
2.4
2.8
Tj=125
0
C
Tj=25
0
C
V
GS
= 10V
4V
IXF_32N50Q
IXF_30N50Q
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
IXFK 30N50Q
IXFK 32N50Q
IXFX 30N50Q
IXFX 32N50Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Pulse Width - Seconds
10
-3
10
-2
10
-1
10
0
10
1
R(th
)
JC
- K/
W
0.02
0.04
0.06
0.08
0.20
0.40
0.01
0.10
V
DS
- Volts
0
5
10
15
20
25
C
a
pacit
a
nce -
pF
100
1000
10000
V
SD
- Volts
0.4
0.6
0.8
1.0
1.2
I
D
-
A
m
p
e
r
e
s
0
20
40
60
80
100
T
J
=125
O
C
T
J
=25
O
C
Gate Charge - nC
0
50
100
150
200
250
V
GS
-
Volt
s
0
2
4
6
8
10
12
14
F = 1MHz
Crss
Coss
Ciss
V
GS
= 0V
T
J
=25
O
C
Vds=300V
I
D
=16A
I
G
=10mA
F = 1MHz
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the
Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFK 30N50Q
IXFK 32N50Q
IXFX 30N50Q
IXFX 32N50Q
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