© 2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
500
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
24N50
24
A
26N50
26
A
I
DM
T
C
= 25
°
C, Note 1
24N50
96
A
26N50
104
A
I
AR
T
C
= 25
°
C
24N50
24
A
26N50
26
A
E
AR
T
C
= 25
°
C
30
mJ
E
AS
T
C
= 25
°
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
,
5 V/ns
T
J
150
°
C, R
G
= 2
P
D
T
C
= 25
°
C
300
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
M
d
Mounting torque 1.13/10
Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
l
IXYS advanced low Q
g
process
l
International standard packages
l
Low R
DS (on)
l
Unclamped Inductive Switching (UIS)
rated
l
Fast switching
l
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
µ
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°
C
25
µ
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
24N50Q
0.23
Note 2
26N50Q
0.20
98512G (5/01)
HiPerFET
TM
Power MOSFETs
Q-Class
TO-247 AD (IXFH)
(TAB)
G = Gate,D = Drain,
S = Source,TAB = Drain
TO-268 (D3) (IXFT) Case Style
(TAB)
G
S
V
DSS
I
D25
R
DS(on)
IXFH/IXFT 24N50Q
500 V
24 A
0.23
IXFH/IXFT 26N50Q
500 V
26 A
0.20
t
rr
250 ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 2
14
24
S
C
iss
3900
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
500
pF
C
rss
130
pF
t
d(on)
28
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
30
ns
t
d(off)
R
G
= 2
(External),
55
ns
t
f
16
ns
Q
g(on)
95
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27
nC
Q
gd
40
nC
R
thJC
0.42
K/W
R
thCK
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
24N50Q
24
A
26N50Q
26
A
I
SM
Repetitive; Note1
24N50Q
96
A
26N50Q
104
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.3
V
Pulse test, t
300
µ
s, duty cycle d
2 %
t
rr
250
ns
Q
RM
I
F
= I
S
, -di/dt = 100 A/
µ
s, V
R
= 100 V
0.85
µ
C
I
RM
8
A
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Min Recommended Footprint
TO-268 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
Note 1. Pulse width limited by T
JM
2. Pulse test, t
300
µ
s, duty cycle d
2 %
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
© 2001 IXYS All rights reserved
Fig.1 Output Characteristics @ T
j
= 25°C
Fig.2 Output Characteristics @ T
j
= 125°C
Fig.3 R
DS(on)
vs. Drain Current
Fig.4 Temperature Dependence of Drain
to Source Resistance
Fig.5 Drain Current vs. Case Temperature
Fig.6 Drain Current vs Gate Source Voltage
T
C
- Degrees C
-50 -25
0
25
50
75
100 125 150
I
D
- A
m
p
e
r
e
s
0
5
10
15
20
25
30
V
GS
- Volts
0
2
4
6
8
I
D
- A
m
p
e
r
e
s
0
10
20
30
40
50
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(
O
N)
-
Normali
z
ed
0.8
1.2
1.6
2.0
2.4
I
D
= 13A
V
DS
- Volts
0
4
8
12
16
20
I
D
-
A
m
p
e
r
e
s
0
10
20
30
40
50
V
DS
- Volts
0
4
8
12
16
20
I
D
- A
m
p
e
r
e
s
0
10
20
30
40
50
60
5V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
6V
5V
6V
V
GS
=10V
9V
8V
7V
V
GS
=10V
9V
8V
7V
I
D
= 26A
T
J
= 25
o
C
I
D
- Amperes
0
10
20
30
40
50
60
R
DS
(
O
N)
-
Normal
iz
ed
0.8
1.2
1.6
2.0
2.4
2.8
T
J
= 125oC
V
GS
= 10V
T
J
= 125
o
C
IXF_26N50Q
T
J
= 25oC
IXF_24N50Q
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- A
m
pe
re
s
0
5
10
15
20
25
30
35
40
45
50
Pulse Width - Seconds
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R
(th
)
JC
-
K/
W
0.00
0.01
0.10
1.00
V
DS
- Volts
0
5
10
15
20
25
30
35
40
Ca
p
acit
a
nc
e -
p
F
100
1000
10000
Gate Charge - nC
0
20
40
60
80
100
120
V
GS
- V
o
l
t
s
0
2
4
6
8
10
12
Crss
Coss
Ciss
V
DS
= 250 V
I
D
= 13 A
I
G
= 10 mA
f = 1MHz
T
J
= 125
O
C
Single Pulse
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
T
J
= 25
O
C
Fig.7 Gate Charge Characteristic Curve
Fig.8
Capacitance Curves
Fig.9 Drain Current vs Drain to Source Voltage
Fig.10 Transient Thermal Impedance
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
PDF 
ZIP