1 - 4
© 2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
800
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
W
800
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
11N80
11
A
13N80
13
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
11N80
44
A
13N80
52
A
I
AR
T
C
= 25
°
C
11N80
11
A
13N80
13
A
E
AR
T
C
= 25
°
C
30
mJ
dv/dt
I
S
£
I
DM
, di/dt
£
100 A/
m
s, V
DD
£
V
DSS
,
5
V/ns
T
J
£
150
°
C, R
G
= 2
W
P
D
T
C
= 25
°
C
300
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Features
· International standard packages
· Low R
DS (on)
HDMOS
TM
process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· AC motor control
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
· Space savings
· High power density
D
G
V
DSS
I
D25
R
DS(on)
IXFH/IXFM
11
N80
800 V
11 A
0.95
W
IXFH/IXFM
13
N80
800 V
13 A
0.80
W
t
rr
£
250 ns
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 · V
DSS
T
J
=
25
°
C
250
m
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 · I
D25
11N80
0.95
W
13N80
0.80
W
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
91528F(7/97)
(TAB)
2 - 4
© 2000 IXYS All rights reserved
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-204 AA (IXFM) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
38.61 39.12
1.520 1.540
B
19.43 19.94
- 0.785
C
6.40
9.14
0.252 0.360
D
0.97
1.09
0.038 0.043
E
1.53
2.92
0.060 0.115
F
30.15
BSC
1.187
BSC
G
10.67 11.17
0.420 0.440
H
5.21
5.71
0.205 0.225
J
16.64 17.14
0.655 0.675
K
11.18 12.19
0.440 0.480
Q
3.84
4.19
0.151 0.165
R
25.16 25.90
0.991 1.020
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 · I
D25
, pulse test
8
14
S
C
iss
4200
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
360
pF
C
rss
100
pF
t
d(on)
20
50
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
33
50
ns
t
d(off)
R
G
= 2
W
(External)
63
100
ns
t
f
32
50
ns
Q
g(on)
128
155
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
30
45
nC
Q
gd
55
80
nC
R
thJC
0.42
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
11N80
11
A
13N80
13
A
I
SM
Repetitive;
11N80
44
A
pulse width limited by T
JM
13N80
52
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
t
rr
T
J
=
25
°
C
250
ns
T
J
= 125
°
C
400
ns
Q
RM
1
m
C
I
RM
8.5
A
I
F
= I
S
-di/dt = 100 A/
m
s,
V
R
= 100 V
IXFH 11N80
IXFH 13N80
IXFM 11N80
IXFM 13N80
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
© 2000 IXYS All rights reserved
T
J
- Degrees C
-50
-25
0
25
50
75
100
125
150
BV/
V
G(
th
)
-
Nor
m
al
i
z
ed
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
T
C
- Degrees C
-50
-25
0
25
50
75
100
125
150
I
D
-
Am
per
es
0
2
4
6
8
10
12
14
16
18
T
J
- Degrees C
-50
-25
0
25
50
75
100
125
150
R
D
S
(
on)
- N
o
rm
a
l
ize
d
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
2
4
6
8 10 12 14 16 18 20 22 24 26
R
D
S
(
on)
- O
h
m
s
0.90
0.95
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
1.40
V
GS
= 10V
T
J
= 25°C
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
Am
per
es
0
2
4
6
8
10
12
14
16
18
T
J
= 25°C
V
DS
= 10V
V
DS
- Volts
0
2
4
6
8
10
12
I
D
-
A
m
per
es
0
2
4
6
8
10
12
14
16
18
7V
V
GS
= 10V
8V
V
GS
= 15V
I
D
= 6.5A
11N80
13N80
BV
DSS
T
J
= 25°C
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
IXFH 11N80
IXFH 13N80
IXFM 11N80
IXFM 13N80
4 - 4
© 2000 IXYS All rights reserved
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
to Drain Voltage
Fig.11 Transient Thermal Impedance
V
DS
- Volts
1
10
100
1000
I
D
-
A
m
per
es
0.1
1
10
V
SD
- Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
-
Am
per
es
0
2
4
6
8
10
12
14
16
18
V
CE
- Volts
0
5
10
15
20
25
C
apaci
t
anc
e -
pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Th
er
m
a
l
R
e
sponse -
K/
W
0.001
0.01
0.1
1
D=0.5
C
rss
C
oss
100ms
10ms
1ms
100µs
10µs
Limited by R
DS(on)
C
iss
Single Pulse
Gate Charge - nCoulombs
0
25
50
75
100
125
150
V
GE
- V
o
l
t
s
0
2
4
6
8
10
V
DS
= 400V
I
D
= 13A
I
G
= 10mA
T
J
= 125°C
T
J
= 25°C
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
f = 1 MHz
V
DS
= 25V
IXFH 11N80
IXFH 13N80
IXFM 11N80
IXFM 13N80
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