© 2005 IXYS All rights reserved
DS99329(02/05)
PolarHV
TM
HiPerFET
Power MOSFET
IXFA 14N60P
V
DSS
= 600 V
IXFP 14N60P
I
D25
= 14 A
IXFH 14N60P
R
DS(on)
550 m
N-Channel Enhancement Mode
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
µ
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
3.5
5.5
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
5
µ
A
V
GS
= 0 V
T
J
= 125
°
C
50
µ
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
450
550 m
Pulse test, t
300
µ
s, duty cycle d
2 %
G = Gate
D = Drain
S = Source
TAB = Drain
TO-3P (IXTQ)
TO-263 (IXTA)
TO-220 (IXTP)
G
D
S
(TAB)
D
(TAB)
G
S
G
S
(TAB)
ADVANCE TECHNICAL INFORMATION
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
600
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
600
V
V
GS
Continuous
±
30
V
V
GSM
Tranisent
±
40
V
I
D25
T
C
= 25
°
C
14
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
42
A
I
AR
T
C
= 25
°
C
14
A
E
AR
T
C
= 25
°
C
23
mJ
E
AS
T
C
= 25
°
C
0.9
J
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
,
10
V/ns
T
J
150
°
C, R
G
= 4
P
D
T
C
= 25
°
C
300
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Plastic body for 10 s
250
°
C
M
d
Mounting torque
(TO-3P,TO-220)
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
TO-220
4
g
TO-263 2 g
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
TO-263 (IXTA) Outline
Pins: 1 - Gate
2 - Drain
TO-220 (IXTP) Outline
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
7
13
S
C
iss
2300
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
215
pF
C
rss
13
pF
t
d(on)
23
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
27
ns
t
d(off)
R
G
= 10
(External)
70
ns
t
f
26
ns
Q
g(on)
38
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
14
nC
Q
gd
12
nC
R
thJC
0.42 K/W
R
thCK
(TO-3P)
0.21
K/W
R
thCK
(TO-220)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
14
A
I
SM
Repetitive
42
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
µ
s, duty cycle d
2 %
t
rr
I
F
= 14 A, -di/dt = 100 A/
µ
s
250
ns
I
RM
V
R
= 100 V
6
A
Q
RM
0.6
µ
C
IXFA 14N60P IXFP 14N60P
IXFH 14N60P
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals: 1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
© 2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
5
10
15
20
25
30
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
7V
8V
Fig. 3. Output Characteristics
@ 125
º
C
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
6V
7V
Fig. 1. Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
14
0
1
2
3
4
5
6
7
8
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
9V
8V
7V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
I
D
= 14A
I
D
= 7A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0
5
10
15
20
25
30
I
D
- Amperes
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
T
J
= 125
º
C
T
J
= 25
º
C
V
GS
= 10V
IXFA 14N60P IXFP 14N60P
IXFH 14N60P
IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
it
a
n
c
e
-
pic
o
F
a
r
a
d
s
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 300V
I
D
= 7A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
5
10
15
20
25
30
35
40
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
45
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
5
10
15
20
25
30
35
40
45
50
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
10
100
1000
V
D S
- Volts
I
D
-
A
m
p
e
re
s
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
IXFA 14N60P IXFP 14N60P
IXFH 14N60P
© 2005 IXYS All rights reserved
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t h
) J C
-
º
C / W
IXFA 14N60P IXFP 14N60P
IXFH 14N60P
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