© 2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 175
°
C
500
V
V
DGR
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
500
V
V
GSM
Transient
±
40
V
V
GSM
Continuous
±
30
V
I
D25
T
C
= 25
°
C
24
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
132
A
I
AR
T
C
= 25
°
C
30
A
E
AR
T
C
= 25
°
C
55
mJ
E
AS
T
C
= 25
°
C
1.7
J
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
,
10
V/ns
T
J
150
°
C, R
G
= 10
P
D
T
C
= 25
°
C
208
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Maximum tab temperature for soldering
260
°
C
for 10s
V
ISOL
50/60 Hz, RMS, 1 minute
2500
V~
F
C
Mounting Force
20..120 / 4.5..25
N/lb
Weight
5
g
DS99319(06/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
µ
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
3.0
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
10
nA
I
DSS
V
DS
= V
DSS
25
µ
A
V
GS
= 0 V
T
J
= 125
°
C
500
µ
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
150 m
Pulse test, t
300
µ
s, duty cycle d
2 %
Advance Technical Information
N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode
IXFR 44N50P
V
DSS
= 500 V
I
D25
= 24 A
R
DS(on)
< 150 m
t
rr
< 200 ns
G = Gate
D = Drain
S = Source
ISOLATED TAB
G
D
S
ISOPLUS247 (IXFR)
E153432
Features
International standard isolated
package
UL recognized package
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Advantages
Easy to mount
Space savings
High power density
PolarHV
TM
HiPerFET
Power MOSFET
ISOPLUS247
TM
(Electrically Isolated Back Surface)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 44N50P
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
32
S
C
iss
5440
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
639
pF
C
rss
40
pF
t
d(on)
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
D25
27
ns
t
d(off)
R
G
= 3
(External)
70
ns
t
f
18
ns
Q
g(on)
98
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
35
nC
Q
gd
30
nC
R
thJC
0.6 K/W
R
thCK
(ISOPLUS247)
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
30
A
I
SM
Repetitive
132
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
µ
s, duty cycle d
2 %
t
rr
I
F
= 22 A,
200
ns
Q
RM
-di/dt = 100 A/
µ
s
0.6
µ
C
I
RM
V
R
= 100V 6.0 A
ISOPLUS247 Outline
© 2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125
º
C
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
14
16
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
V
GS
= 10V
8V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25
º
C
0
5
10
15
20
25
30
35
40
45
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
- A
m
p
e
re
s
V
GS
= 10V
8V
7V
5V
6V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o
n
)
- N
o
rm
a
l
i
z
e
d
I
D
= 44A
I
D
= 22A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
5
10
15
20
25
30
35
40
45
50
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
r
e
s
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
0
10
20
30
40
50
60
70
80
90
100
I
D
- Amperes
R
D
S
(
o n )
- N
o
rm
a
l
i
z
e
d
T
J
= 125
º
C
T
J
= 25
º
C
V
GS
= 10V
IXFR 44N50P
Fig. 6. Drain Current vs. Case
Tem perature
0
5
10
15
20
25
30
35
40
45
50
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
r
e
s
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 44N50P
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
a
pa
c
i
t
a
nc
e -
p
i
c
o
F
a
r
a
d
s
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
70
80
90 100
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
DS
= 250V
I
D
= 22A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
3.5
4
4.5
5
5.5
6
6.5
V
G S
- Volts
I
D
-
A
m
per
e
s
T
J
= 125
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
I
D
- Amperes
g
f s
-
S
i
em
en
s
T
J
= -40
º
C
25
º
C
125
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
V
S D
- Volts
I
S
- A
m
p
e
r
e
s
T
J
= 125
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
- A
m
p
e
r
e
s
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
© 2005 IXYS All rights reserved
IXFR 44N50P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
0.1
1
10
100
1000
Pulse Width - milliseconds
R
( t
h
) J
C
-
º
C /
W
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