1 - 2
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
500
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
W
500
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
26N50
26
A
24N50
24
A
I
DM
T
C
= 25
°
C, Pulse width limited by T
JM
26N50
104
A
24N50
96
A
I
AR
T
C
= 25
°
C
26N50
26
A
24N50
24
A
E
AR
T
C
= 25
°
C
30
mJ
dv/dt
I
S
£
I
DM
, di/dt
£
100 A/
m
s, V
DD
£
V
DSS
5
V/ns
T
J
£
150
°
C, R
G
= 2
W
P
D
T
C
= 25
°
C
250
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS
t = 1 minute leads-to-tab
2500
V~
Weight
6
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250uA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
2
4
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 · V
DSS
T
J
= 25
°
C
200
m
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= I
T
26N50
0.20
W
Notes 1 & 2
24N50
0.23
W
98526A (2/99)
ISOPLUS 247
TM
G
D
Advanced Technical Information
Features
· Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
· Low drain to tab capacitance(<50pF)
· Low R
DS (on)
HDMOS
TM
process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· AC motor control
Advantages
· Easy assembly
· Space savings
· High power density
G = Gate
D = Drain
S = Source
* Patent pending
Isolated back surface*
V
DSS
I
D25
R
DS(on)
IXFR 26N50
500 V
24 A
0.20
W
IXFR 24N50
500 V
22 A
0.23
W
t
rr
£
250 ns
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t
rr
, HDMOS
TM
Family
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 2
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 15 V; I
D
= I
T
Note 1
11
21
S
C
iss
4200
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
450
pF
C
rss
135
pF
t
d(on)
16
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= I
T
33
45
ns
t
d(off)
R
G
= 1
W
(External),
65
80
ns
t
f
30
40
ns
Q
g(on)
135
160
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= I
T
28
40
nC
Q
gd
62
85
nC
R
thJC
0.50
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive; pulse width limited by T
JM
104
A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
T
J
= 25
°
C
250
ns
T
J
= 125
°
C
400
ns
Q
RM
T
J
= 25
°
C
1
1.5
m
C
T
J
= 125
°
C
2
m
C
I
RM
T
J
= 25
°
C
10
A
T
J
= 125
°
C
15
A
I
F
= I
s
, -di/dt = 100 A/
m
s,
V
R
= 100 V
Note: 1. Pulse test, t
£
300
m
s, duty cycle d
£
2 %
2. I
T
test current: IXFR26N50
I
T
= 13A
IXFR24N50
I
T
= 12A
3.See IXFH26N50 data sheet for characteristic curves.
IXFR 24N50
IXFR 26N50
ISOPLUS 247 (IXFR) OUTLINE
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190 .205
A
1
2.29
2.54
.090 .100
A
2
1.91
2.16
.075 .085
b
1.14
1.40
.045 .055
b
1
1.91
2.13
.075 .084
b
2
2.92
3.12
.115 .123
C
0.61
0.80
.024 .031
D
20.80
21.34
.819 .840
E
15.75
16.13
.620 .635
e 5.45 BSC
.215 BSC
L
19.81
20.32
.780 .800
L1
3.81
4.32
.150 .170
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
S
13.21
13.72
.520 .540
T
15.75
16.26
.620 .640
U
1.65
3.03
.065 .080
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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