© 2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 175
°
C
250
V
V
DGR
T
J
= 25
°
C to 175
°
C; R
GS
= 1 M
250
V
V
DSS
T
J
= 25
°
C to 175
°
C
±
30
V
V
GSM
±
20
V
I
D25
T
C
= 25
°
C
61
A
I
D(RMS)
External lead current limit
75
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
300
A
I
AR
T
C
= 25
°
C
60
A
E
AR
T
C
= 25
°
C
60
mJ
E
AS
T
C
= 25
°
C
2.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
,
10
V/ns
T
J
150
°
C, R
G
= 4
P
D
T
C
= 25
°
C
250
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-40 ... +125
°
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Plastic body for 10 s
260
°
C
V
ISOL
50/60 Hz, RMS, t = 1 minute
2500
V~
F
C
Mounting force
20..120 / 4.5..25
N/lb
Weight
5
g
G = Gate
D = Drain
S = Source
DS99404(05/05)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
µ
A
250
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
200
nA
I
DSS
V
DS
= V
DSS
25
µ
A
V
GS
= 0 V
T
J
= 125
°
C
250
µ
A
R
DS(on)
V
GS
= 10 V, I
D
= I
T
22
27
m
Pulse test, t
300
µ
s, duty cycle d
2 %
PolarHT
TM
HiPerFET
Power MOSFET
Electrically Isolated Tab
IXFR 120N25P
N-Channel Enhancement Mode
Features
International standard isolated package
UL recognized package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
V
DSS
= 250 V
I
D25
= 61
A
R
DS(on)
= 27 m
Preliminary Data Sheet
ISOLATED TAB
G
D
S
ISOPLUS247 (IXFR)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 120N25P
Symbol
Test Conditions Characteristic Values
(T
J
= 25
°
C unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
50
70
S
C
iss
8000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1300
pF
C
rss
220
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 60 A
33
ns
t
d(off)
R
G
= 3.3
(External)
130
ns
t
f
33
ns
Q
g(on)
185
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
50
nC
Q
gd
80
nC
R
thJC
0.5 K/W
R
thCK
0.15
K/W
Source-Drain Diode Characteristic Values
(T
J
= 25
°
C unless otherwise specified)
Symbol
Test Conditions
Min.
typ.
Max.
I
S
V
GS
= 0 V
120
A
I
SM
Repetitive
300
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
µ
s, duty cycle d
2 %
t
rr
I
F
= 25 A
200
ns
-di/dt = 100 A/
µ
s
Q
RM
V
R
= 100 V
1.5
µ
C
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
ISOPLUS247 Outline
© 2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
25
50
75
100
125
150
175
200
225
250
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
º
C
0
10
20
30
40
50
60
70
80
90
100
110
120
0
1
2
3
4
5
6
7
8
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
110
120
0
0.5
1
1.5
2
2.5
3
3.5
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 120A
I
D
= 60A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.6
1
1.4
1.8
2.2
2.6
3
3.4
3.8
0
30
60
90
120
150 180 210 240
270
I
D
- Amperes
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
T
J
= 25
º
C
V
GS
= 10V
T
J
= 150
º
C
V
GS
= 15V
IXFR 120N25P
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 120N25P
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160 180 200
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 125V
I
D
= 60A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
30
60
90
120
150
180
210
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 150
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0
30
60
90
120
150
180
210
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100µs
1ms
DC
T
J
= 150
º
C
T
C
= 25
º
C
R
DS(on)
Limit
10ms
25µs
© 2005 IXYS All rights reserved
IXFR 120N25P
Fig. 13. Maximum Transient Thermal Resistance
0.01
0.10
1.00
1
10
100
1000
Pulse Width - milliseconds
R
( t
h ) J C
-
ºC / W
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