© 2001 IXYS All rights reserved
Isolated backside*
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
250
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
250
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C (MOSFET chip capability)
87
A
I
L(RMS)
T
C
= External lead current limit
75
A
I
DM
T
C
= 25
°
C, Note 1
400
A
I
AR
T
C
= 25
°
C
100
A
E
AR
T
C
= 25
°
C
64
mJ
E
AS
T
C
= 25
°
C
3
J
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
5
V/ns
T
J
150
°
C, R
G
= 2
P
D
T
C
= 25
°
C
400
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMSt = 1 min
2500
V~
Weight
5
g
ISOPLUS 247
TM
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low drain to tab capacitance(<30pF)
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Rated for Unclamped Inductive Load
Switching (UIS)
l
Fast intrinsic Rectifier
Applications
l
DC-DC converters
l
Battery chargers
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
l
AC motor control
Advantages
l
Easy assembly
l
Space savings
l
High power density
G = Gate
D = Drain
S = Source
* Patent pending
E153432
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
250
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
2.0
4 V
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°
C
100
µ
A
V
GS
= 0 V
T
J
= 125
°
C
2 mA
R
DS(on)
V
GS
= 10 V, I
D
= I
T
27 m
Notes 2, 3
98840 (5/01)
IXFR 100N25 V
DSS
= 250
V
I
D25
= 87
A
R
DS(on)
= 27 m
t
rr
250 ns
Advance Technical Information
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 100N25
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= I
T
Notes 2, 3
40
70
S
C
iss
9100
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1800
pF
C
rss
600
pF
t
d(on)
42
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
55
ns
t
d(off)
R
G
= 1
(External), Notes 2, 3
110
ns
t
f
40
ns
Q
g(on)
300
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= I
T
57
nC
Notes 2, 3
Q
gd
160
nC
R
thJC
0.3
K/W
R
thCK
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
100
A
I
SM
Repetitive; Note 1
400
A
V
SD
I
F
= I
T
, V
GS
= 0 V, Notes 2, 3
1.5
V
t
rr
250
ns
Q
RM
1.4
µ
C
I
RM
10
A
I
F
= 50A,-di/dt = 100 A/
µ
s, V
R
= 100 V
Note: 1. Pulse width limited by T
JM
2. Pulse test, t
300
µ
s, duty cycle d
2 %
3. I
T
= 50
ISOPLUS 247 OUTLINE
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