© 2002 IXYS All rights reserved
Features
·
International standard packages
·
miniBLOC,
with Aluminium nitride
isolation
·
Low R
DS (on)
HDMOS
TM
process
·
Rugged polysilicon gate cell structure
·
Unclamped Inductive Switching (UIS)
rated
·
Low package inductance
·
Fast intrinsic Rectifier
Applications
·
DC-DC converters
·
Battery chargers
·
Switched-mode and resonant-mode
power supplies
·
DC choppers
·
Temperature and lighting controls
Advantages
·
Easy to mount
·
Space savings
·
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
500
V
V
GH(th)
V
DS
= V
GS
, I
D
= 8 mA
2
4
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
200
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°
C
100
µ
A
V
GS
= 0 V
T
J
= 125
°
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
80N50
50
m
Pulse test, t
300
µ
s,
75N50
55
m
duty cycle d
2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
500
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C, Chip capability
75N50
75
A
80N50
80
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
75N50
300
A
80N50
320
A
I
AR
T
C
= 25
°
C
80
A
E
AR
T
C
= 25
°
C
64
mJ
E
AS
T
C
= 25
°
C
6
J
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
,
5
V/ns
T
J
150
°
C, R
G
= 2
P
D
T
C
= 25
°
C
700
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13 Nm/lb.in.
Terminal connection torque
1.5/13 Nm/lb.in.
Weight
30
g
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
98538C (02/02)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
D = Drain
S = Source
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
V
DSS
I
D25
R
DS(on)
IXFN 80N50
500 V
80 A
50
m
IXFN 75N50
500 V
75 A
55
m
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXFN 75N50
IXFN 80N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 15 V; I
D
= 0.5 · I
D25
, pulse test
50
70
S
C
iss
9890
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1750
pF
C
rss
460
pF
t
d(on)
61
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
70
ns
t
d(off)
R
G
= 1
(External),
102
ns
t
f
27
ns
Q
g(on)
380
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
80
nC
Q
gd
173
nC
R
thJC
0.18
K/W
R
thCK
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
75N50
75
A
80N50
80
A
I
SM
Repetitive;
75N50
300
A
pulse width limited by T
JM
80N50
320
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.3
V
Pulse test, t
300
µ
s, duty cycle d
2 %
t
rr
I
F
= 30A, -di/dt = 100 A/
µ
s, V
R
= 100 V
250
ns
Q
RM
1.2
µ
C
I
RM
8
A
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
31.50
31.88
1.240
1.255
B
7.80
8.20
0.307
0.323
C
4.09
4.29
0.161
0.169
D
4.09
4.29
0.161
0.169
E
4.09
4.29
0.161
0.169
F
14.91
15.11
0.587
0.595
G
30.12
30.30
1.186
1.193
H
38.00
38.23
1.496
1.505
J
11.68
12.22
0.460
0.481
K
8.92
9.60
0.351
0.378
L
0.76
0.84
0.030
0.033
M
12.60
12.85
0.496
0.506
N
25.15
25.42
0.990
1.001
O
1.98
2.13
0.078
0.084
P
4.95
5.97
0.195
0.235
Q
26.54
26.90
1.045
1.059
R
3.94
4.42
0.155
0.174
S
4.72
4.85
0.186
0.191
T
24.59
25.07
0.968
0.987
U-0.05
0.1
-0.002
0.004
© 2002 IXYS All rights reserved
T
C
- Degrees C
-50 -25
0
25
50
75 100 125 150
I
D
- A
m
peres
0
20
40
60
80
100
I
D
- Amperes
0
10
20
30
40
50
60
70
80
R
DS
(O
N
)
- N
o
rmali
z
ed
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
V
DS
- Volts
0
2
4
6
8
10
I
D
- A
m
p
e
r
e
s
0
20
40
60
80
100
V
DS
- Volts
0
1
2
3
4
5
I
D
-
A
m
p
e
r
e
s
0
20
40
60
80
100
V
GS
= 10V
T
J
= 125
O
C
T
J
= 25
O
C
4V
4V
5V
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
5V
V
GS
= 9V
8V
7V
6V
T
J
= 25
O
C
V
GS
- Volts
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
I
D
- A
m
p
e
r
e
s
0
10
20
30
40
50
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(O
N
)
- N
o
rmali
z
ed
1.0
1.3
1.6
1.9
2.2
2.5
2.8
I
D
=40A
I
D
= 80A
V
GS
= 10V
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value
vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
DS(on)
normalized to 0.5 I
D25
value vs. T
J
IXFN 75N50
IXFN 80N50
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
V
SD
- Volts
0.2
0.4
0.6
0.8
1.0
1.2
I
D
- A
m
p
e
r
e
s
0
20
40
60
80
100
Pulse Width - Seconds
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R
(th
)
JC
-
K/
W
0.001
0.010
0.100
1.000
V
DS
- Volts
0
5
10
15
20
25
30
35
40
Capa
ci
t
a
n
ce -
pF
100
1000
10000
Gate Charge - nC
0
50
100 150 200 250 300 350 400
V
GS
-
V
o
lt
s
0
2
4
6
8
10
Crss
Coss
V
DS
= 250 V
I
D
= 40 A
I
G
= 10 mA
f = 100kHz
T
J
= 25
O
C
Ciss
30000
T
J
= 125
O
C
V
GS
= 0V
Single Pulse
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 10. Transient Thermal Resistance
IXFN 75N50
IXFN 80N50
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