© 2005 IXYS All rights reserved
DS99349(02/05)
PolarHV
TM
HiPerFET
Power MOSFET
IXFN 64N50P V
DSS
= 500 V
I
D25
= 64 A
R
DS(on)
85 m
t
rr
250 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Features
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min. Typ.
Max.
V
DSS
V
GS
= 0 V, I
D
= 250
µ
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA
2.5
5.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
25
µ
A
V
GS
= 0 V
T
J
= 125
°
C
250
µ
A
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
85 m
Pulse test, t
300
µ
s, duty cycle d
2 %
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
500
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
V
GSS
Continuous
±
30
V
V
GSM
Transient
±
40
V
I
D25
T
C
= 25
°
C
64
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
150
A
I
AR
T
C
= 25
°
C
64
A
E
AR
T
C
= 25
°
C
70
mJ
E
AS
T
C
= 25
°
C
2.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
,
20
V/ns
T
J
150
°
C, R
G
= 4
P
D
T
C
= 25
°
C
700
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
V
ISOL
50/60 Hz
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13 Nm/lb.in.
Terminal connection torque (M4)
1.5/13 Nm/lb.in.
Weight
SOT-227B 30 g
Preliminary Data Sheet
G = Gate
D = Drain
S = Source
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
G
D
S
S
miniBLOC, SOT-227 B (IXFN)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFN64N50P
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ. Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
40
60
S
C
iss
7000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
800
pF
C
rss
100
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 I
D25
25
ns
t
d(off)
R
G
= 2
(External)
85
ns
t
f
22
ns
Q
g(on)
200
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
45
nC
Q
gd
120
nC
R
thJC
0.18 K/W
R
thCK
SOT-227B
0.05
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
64
A
I
SM
Repetitive
150
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
µ
s, duty cycle d
2 %
t
rr
I
F
= 25A, -di/dt = 100 A/
µ
s
250
ns
Q
RM
V
R
= 100V
0.6
µ
C
SOT-227B Outline
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