91531D

IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670

IXYS Semiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030 Fax: +49-6206-503629

XYS reserves the right to change limits, test conditions, and dimensions.

IXFH 10N100

IXFM 10N100

IXFH 12N100

IXFM 12N100

Symbol

Test Conditions

Maximum Ratings

DSS

= 25

C to 150

1000

DGR

= 25

C to 150

C; R

= 1 M

1000

G S

Continuous

GSM

Transient

D25

= 25

10N100

12N100

= 25

C, pulse width limited by T

10N100

12N100

= 25

10N100

12N100

= 25

dv/dt

, di/dt

100 A/

s, V

DSS

V/ns

150

C, R

= 2

= 25

300

-55 ... +150

150

stg

-55 ... +150

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-204 = 18 g, TO-247 = 6 g

Maximum lead temperature for soldering

300

1.6 mm (0.062 in.) from case for 10 s

Symbol

Test Conditions

Characteristic Values

= 25

C, unless otherwise specified)

Min.

Typ. Max.

DSS

= 0 V, I

= 3 mA

1000

GS(th)

= V

, I

= 4 mA

2.0

4.5

GSS

20 V

, V

= 0

100

DSS

= 0.8 V

DSS

250

= 0 V

= 125

DS(on)

= 10 V, I

= 0.5 I

D25

10N100

1.20

12N100

1.05

Pulse test, t

300

s, duty cycle

2 %

TO-247 AD (IXFH)

TO-204 AA (IXFM)

G = Gate

D = Drain

S = Source

TAB = Drain

HiPerFET

Power MOSFETs

N-Channel Enhancement Mode
High dv/dt, Low t

, HDMOS

Family

DSS

D25

DS(on)

IXFH/FM 10N100 1000 V

10 A

1.20

250 ns

IXFH/FM 12N100 1000 V

12 A

1.05

250 ns

Features

International standard packages

Low R

DS (on)

HDMOS

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)
rated

Low package inductance
- easy to drive and to protect

Fast intrinsic Rectifier

Applications

DC-DC converters

Synchronous rectification

Battery chargers

Switched-mode and resonant-mode
power supplies

DC choppers

AC motor control

Temperature and lighting controls

Low voltage relays

Advantages

Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)

Space savings

High power density

91531D (10/95)

IXYS Corporation
3540 Bassett Street, Santa Clara,CA 95054
Tel: 408-982-0700 Fax: 408-496-0670

IXYS Semiconductor

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: +49-6206-5030 Fax: +49-6206-503629

XYS reserves the right to change limits, test conditions, and dimensions.

IXFH 10N100

IXFM 10N100

IXFH 12N100

IXFM 12N100

Symbol

Test Conditions

Characteristic Values

= 25

C, unless otherwise specified)

Min.

Typ. Max.

= 10 V; I

= 0.5 I

D25

, pulse test

iss

4000

oss

= 0 V, V

= 25 V, f = 1 MHz

310

rss

d(on)

= 10 V, V

= 0.5 V

DSS

, I

= 0.5 I

D25

d(off)

= 2

(External),

100

g(on)

122

155

= 10 V, V

= 0.5 V

DSS

, I

= 0.5 I

D25

thJC

0.42

K/W

thCK

0.25

K/W

Source-Drain Diode

Characteristic Values

= 25

C, unless otherwise specified)

Symbol

Test Conditions

Min.

Typ. Max.

= 0

10N100

12N100

Repetitive;

10N100

pulse width limited by T

12N100

= I

, V

= 0 V,

1.5

Pulse test, t

300

s, duty cycle

2 %

250

= 125

400

= 125

TO-247 AD (IXFH) Outline

= I

-di/dt = 100 A/

= 100 V

TO-204 AA (IXFM) Outline

Part Number IXFM 12N100