© 2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
500
V
V
DGR
T
J
= 25
°C to 150°C; R
GS
= 1 M
500
V
V
GS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C
= 25
°C
66
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
264
A
I
AR
T
C
= 25
°C
66
A
E
AR
T
C
= 25
°C
75
mJ
E
AS
T
C
= 25
°C
4.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
20
V/ns
T
J
150°C, R
G
= 2
P
D
T
C
= 25
°C
735
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°C
M
d
Mounting torque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
6
g
TO-264
10
g
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Low intrinsic R
g
, low t
rr
Features
Double metal process for low gate
resistance
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA
2.0
4.5
V
I
GSS
V
GS
=
±30 V
DC
, V
DS
= 0
±200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°C
50
µA
V
GS
= 0 V
T
J
= 125
°C
2 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 · I
D25
80 m
Pulse test, t
300 µs, duty cycle d 2 %
G = Gate
D = Drain
S = Source
TAB = Drain
DS98983A(7/04)
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
= 500 V
I
D25
= 66 A
R
DS(on)
= 80 m
t
rr
250 ns
IXFK 66N50Q2
IXFX 66N50Q2
PLUS 247
TM
(IXFX)
G
D
D (TAB)
Preliminary Data Sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 · I
D25
, pulse test
30
44
S
C
iss
8400
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1290
pF
C
rss
310
pF
t
d(on)
32
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
16
ns
t
d(off)
R
G
= 1.0
(External),
60
ns
t
f
10
ns
Q
g(on)
200
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
47
nC
Q
gd
98
nC
R
thJC
0.17
K/W
R
thCK
TO-264
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
66
A
I
SM
Repetitive; pulse width limited by T
JM
264
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 µs, duty cycle d 2 %
t
rr
250 ns
Q
RM
1
µC
I
RM
10
A
I
F
= 25A, -di/dt = 100 A/
µs, V
R
= 100 V
TO-264 AA Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
IXFK 66N50Q2
IXFX 66N50Q2
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C
0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45 BSC
.215 BSC
L
19.81
20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
© 2004 IXYS All rights reserved
IXFK 66N50Q2
IXFX 66N50Q2
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
14
16
18
20
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 3. Output Characteristics
@ 125
º
C
0
10
20
30
40
50
60
70
0
2
4
6
8
10
12
14
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
3.5V
4.5V
5.5V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
-
A
m
per
es
V
GS
= 10V
8V
7V
5V
6V
5.5V
4.5V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
I
D
= 66A
I
D
= 33A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Tem perature
0
10
20
30
40
50
60
70
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
-
A
m
per
es
Fig. 5. R
DS(on)
Norm alized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0
20
40
60
80
100
120
140
160
I
D
- Amperes
R
D
S
(
o n )
-
N
o
rm
a
l
i
z
e
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 66N50Q2
IXFX 66N50Q2
Fig. 11. Capacitance
100
1000
10000
0
5
10
15
20
25
30
35
40
V
D S
- Volts
C
apac
i
t
anc
e -
pi
c
o
F
a
r
ads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0
20
40
60
80
100 120 140 160 180 200
Q
G
- nanoCoulombs
V
G S
-
V
o
l
t
s
V
DS
= 250V
I
D
= 33A
I
G
= 10mA
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
3
3.5
4
4.5
5
5.5
6
6.5
7
V
G S
- Volts
I
D
-
A
m
per
es
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
0
20
40
60
80
100
120
I
D
- Amperes
g
f s
-
S
i
em
ens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
20
40
60
80
100
120
140
160
180
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
V
S D
- Volts
I
S
-
A
m
per
es
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10
100
1000
V
D S
- Volts
I
D
-
A
m
per
es
100µs
1ms
DC
T
J
= 150ºC
T
C
= 25ºC
R
DS(on)
Limit
10ms
25µs
© 2004 IXYS All rights reserved
IXFK 66N50Q2
IXFX 66N50Q2
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l Re s is t a n c e
0 . 0 0
0 . 0 1
0 . 1 0
1 . 0 0
0 . 1
1
1 0
1 0 0
1 0 0 0
1 0 0 0 0
Pu ls e W id th - m illis e c o n d s
R
( t h ) J
C
-
º
C /
W
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