miniBLOC, SOT-227 B (IXFN)
E153432

TO-264 AA (IXFK)

Features

International standard packages

Encapsulating

epoxy

meets

V-0, flammability classification

miniBLOC

with Aluminium nitride

isolation

Low R

DS (on)

HDMOS

process

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)
rated

Low package inductance

Fast intrinsic Rectifier

Advantages

PLUS247 package for clip or spring
bar mounting

Easy to mount

Space savings

High power density

G = Gate

D = Drain

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used
as Main or Kelvin Source

D (TAB)

DS97502G(11/04)

HiPerFET

Power MOSFET

Single Die MOSFET

IXFK 55N50

IXFX 55N50

IXFN 55N50

DSS

= 500 V

D25

55 A

DS(on)

= 90m

250 ns

PLUS247(IXFX)

(TAB)

Symbol

Test Conditions

Characteristic Values

= 25

°C, unless otherwise specified)

Min. Typ.

Max.

DSS

= 0 V, I

= 1 mA

500

GS(th)

= V

, I

= 8 mA

2.5

4.5

GSS

±20 V

, V

= 0

±200

DSS

= V

DSS

µA

= 0 V

= 125

°C

DS(on)

= 10 V, I

= 0.5 I

D25

Pulse test, t

300 µs, duty cycle d 2 %

Symbol

Test Conditions

Maximum Ratings

DSS

= 25

°C to 150°C

500

DGR

= 25

°C to 150°C

500

GSS

Continuous

±20

GSM

Transient

±30

D25

= 25

°C

= 25

°C, pulse width limited by T

220

= 25

°C

= 25

°C

dv/dt

, di/dt

100 A/µs, V

DSS

V/ns

150°C, R

= 4

= 25

°C

625

-55 ... +150

°C

150

°C

stg

-55 ... +150

°C

1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX)

300

°C

Mounting torque

(IXFK, IXFX)

1.13/10 Nm/lb.in.

Terminal leads

(IXFN)

1.13/10 Nm/lb.in.

ISOL

50/60 Hz, RMS

(IXFN) t = 1minute

2500

ISOL

1 mA

t = 1 s

3000

Weight

PLUS247

TO-264

SOT-227B

Symbol

Test Conditions

Characteristic Values

= 25

°C, unless otherwise specified)

Min.

Typ.

Max.

= 10 V; I

= 0.5 · I

D25

Note 1

iss

9400

oss

= 0 V, V

= 25 V, f = 1 MHz

1280

rss

460

d(on)

= 10 V, V

= 0.5 · V

DSS

, I

= 0.5 · I

D25

d(off)

= 1

(External),

120

g(on)

330

= 10 V, V

= 0.5 · V

DSS

, I

= 0.5 · I

D25

155

thJC

0.20

K/W

thCK

IXFK, IXFX

0.15

K/W

thCK

0.05

K/W

Source-Drain Diode
(T

= 25

°C, unless otherwise specified)

Characteristic Values

Symbol

Test Conditions

Min.

Typ. Max.

= 0

Repetitive;

220

pulse width limited by T

= 100 A, V

= 0 V

Note 1

1.5

250

= 25 A, -di/dt = 100 A/

µs, V

= 100 V

1.0

µC

M4 screws (4x) supplied

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

31.50

31.88

1.240

1.255

7.80

8.20

0.307

0.323

4.09

4.29

0.161

0.169

4.09

4.29

0.161

0.169

4.09

4.29

0.161

0.169

14.91

15.11

0.587

0.595

30.12

30.30

1.186

1.193

38.00

38.23

1.496

1.505

11.68

12.22

0.460

0.481

8.92

9.60

0.351

0.378

0.76

0.84

0.030

0.033

12.60

12.85

0.496

0.506

25.15

25.42

0.990

1.001

1.98

2.13

0.078

0.084

4.95

5.97

0.195

0.235

26.54

26.90

1.045

1.059

3.94

4.42

0.155

0.174

4.72

4.85

0.186

0.191

24.59

25.07

0.968

0.987

-0.05

0.1

-0.002

0.004

miniBLOC (SOT-227B) Outline

Millimeter

Inches

Min.

Max.

Min.

Max.

4.82

5.13

.190

.202

2.54

2.89

.100

.114

2.00

2.10

.079

.083

1.12

1.42

.044

.056

2.39

2.69

.094

.106

2.90

3.09

.114

.122

0.53

0.83

.021

.033

25.91

26.16

1.020

1.030

19.81

19.96

.780

.786

5.46 BSC

.215 BSC

0.00

0.25

.000

.010

0.00

0.25

.000

.010

20.32

20.83

.800

.820

2.29

2.59

.090

.102

3.17

3.66

.125

.144

6.07

6.27

.239

.247

8.38

8.69

.330

.342

3.81

4.32

.150

.170

1.78

2.29

.070

.090

6.04

6.30

.238

.248

1.57

1.83

.062

.072

Dim.

TO-264 AA Outline

Notes: 1. Pulse test, t

300 µs, duty cycle d 2 %

IXFK55N50

IXFX55N50
IXFN55N50

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Terminals:

1 - Gate

2 - Collector

PLUS247 Outline

- Degrees C

-50 -25

100 125 150

- A

- Degrees C

100

125

150

(
O

)

- N

e
d

1.0

1.2

1.4

1.6

1.8

2.0

2.2

- Volts

3.0

3.5

4.0

4.5

5.0

5.5

6.0

- A

r
e
s

100

- Degrees C

-50 -25

100 125 150

- A

- Amperes

100

120

(
O

)

- N

e
d

0.8

1.2

1.6

2.0

2.4

2.8

- Volts

100

- Volts

100

120

140

= 10V

= 125

= 10V

= 25

= 55A

= 125

= 10V

= 27.5A

- Amperes

100

120

(
O

)

- N

e
d

0.8

1.2

1.6

2.0

2.4

2.8

= 10V

= 25

= 125

IXF_55N50

IXF_50N50

= 25

Figure 1. Output Characteristics at 25

Figure 2. Output Characteristics at 125

Figure 3. R

DS(on)

normalized to 0.5

D25

value vs. I

Figure 4. R

DS(on)

normalized to 0.5

D25

value vs. T

Figure 5. Drain Current vs. Case Temperature

Figure 6. Admittance Curves

IXFK55N50

IXFX55N50
IXFN55N50

Figure 7. Gate Charge

Figure 8. Capacitance Curves

Figure 9.

Forward Voltage Drop of the
Intrinsic Diode

Figure 10. Transient Thermal Resistance

Gate Charge - nC

100

150

200

250

300

350

- V

lts

= 250V

= 27.5A

- Volts

cita

nce

- pF

100

1000

10000

Crss

Coss

Ciss

f = 1MHz

- Volts

0.2

0.4

0.6

0.8

1.0

- A

r
e

100

= 125

= 25

IXFK55N50

IXFX55N50
IXFN55N50

Pulse Width - Seconds

-4

-3

-2

-1

(th)

- K

/
W

0.00

0.01

0.10

1.00

IXFK55N50/IXFX55N50

IXFN55N50

Part Number IXFK55N50