© 2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
600
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
600
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
26
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
104
A
I
AR
T
C
= 25
°
C
26
A
E
AR
T
C
= 25
°
C
45
mJ
E
AS
T
C
= 25
°
C
1.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
,
5
V/ns
T
J
150
°
C, R
G
= 2
P
D
T
C
= 25
°
C
360
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
M
d
Mounting torque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
6
g
TO-264
10
g
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Features
l
Low gate charge
l
International standard packages
l
Epoxy
meet
UL
94
V-0, flammability
classification
l
Low R
DS (on)
HDMOS
TM
process
l
Rugged polysilicon gate cell structure
l
Avalanche energy and current rated
l
Fast intrinsic Rectifier
Advantages
l
Easy to mount
l
Space savings
l
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
µ
A
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
200
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°
C
25
µ
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
0.25
Pulse test, t
300
µ
s, duty cycle d
2 %
G = Gate
D = Drain
S = Source
TAB = Drain
98919 (05/02)
TO-264 AA (IXFK)
S
G
D
D (TAB)
V
DSS
= 600 V
I
D25
= 26 A
R
DS(on)
= 0.25
t
rr
250 ns
IXFK 26N60Q
IXFX 26N60Q
PLUS 247
TM
(IXFX)
G
D
D (TAB)
Advance Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
14
22
S
C
iss
5100
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
560
pF
C
rss
210
pF
t
d(on)
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
32
ns
t
d(off)
R
G
= 2.0
(External),
80
ns
t
f
16
ns
Q
g(on)
150
200
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
34
nC
Q
gd
80
nC
R
thJC
0.35
K/W
R
thCK
TO-264
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive; pulse width limited by T
JM
104
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
µ
s, duty cycle
d
2 %
t
rr
250 ns
Q
RM
1
µ
C
I
RM
10
A
I
F
= I
S
-di/dt = 100 A/
µ
s, V
R
= 100 V
TO-264 AA Outline
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.82
5.13
.190
.202
A1
2.54
2.89
.100
.114
A2
2.00
2.10
.079
.083
b
1.12
1.42
.044
.056
b1
2.39
2.69
.094
.106
b2
2.90
3.09
.114
.122
c
0.53
0.83
.021
.033
D
25.91
26.16
1.020
1.030
E
19.81
19.96
.780
.786
e
5.46 BSC
.215 BSC
J
0.00
0.25
.000
.010
K
0.00
0.25
.000
.010
L
20.32
20.83
.800
.820
L1
2.29
2.59
.090
.102
P
3.17
3.66
.125
.144
Q
6.07
6.27
.239
.247
Q1
8.38
8.69
.330
.342
R
3.81
4.32
.150
.170
R1
1.78
2.29
.070
.090
S
6.04
6.30
.238
.248
T
1.57
1.83
.062
.072
Dim.
IXFK 26N60Q
IXFX 26N60Q
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.83
5.21
.190
.205
A
1
2.29
2.54
.090
.100
A
2
1.91
2.16
.075
.085
b
1.14
1.40
.045
.055
b
1
1.91
2.13
.075
.084
b
2
2.92
3.12
.115
.123
C0.61
0.80
.024
.031
D
20.80
21.34
.819
.840
E
15.75
16.13
.620
.635
e
5.45 BSC.215 BSC
L
19.81
20.32
.780
.800
L1
3.81
4.32
.150
.170
Q
5.59
6.20
.220 0.244
R
4.32
4.83
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
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