1 - 4
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
6N90
900
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
W
6N100
1000
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
6
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
24
A
I
AR
T
C
= 25
°
C
6
A
E
AR
T
C
= 25
°
C
18
mJ
dv/dt
I
S
£
I
DM
, di/dt
£
100 A/
m
s, V
DD
£
V
DSS
,
5
V/ns
T
J
£
150
°
C, R
G
= 2
W
P
D
T
C
= 25
°
C
180
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
6N90
900
V
6N100
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA
2.0
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 · V
DSS
T
J
=
25
°
C
250
m
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 · I
D25
6N90
1.8
W
6N100
2.0
W
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
D = Drain,
S = Source,
TAB = Drain
D
G
V
DSS
I
D25
R
DS(on)
IXFH/IXFM
6
N90
900 V
6 A
1.8
W
IXFH/IXFM
6
N100
1000 V
6 A
2.0
W
t
rr
£
250 ns
91529E(10/95)
Features
· International standard packages
· Low R
DS (on)
HDMOS
TM
process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· AC motor control
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
· Space savings
· High power density
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
© 2000 IXYS All rights reserved
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-204 AA (IXFM) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
38.61 39.12
1.520 1.540
B
19.43 19.94
- 0.785
C
6.40
9.14
0.252 0.360
D
0.97
1.09
0.038 0.043
E
1.53
2.92
0.060 0.115
F
30.15
BSC
1.187
BSC
G
10.67 11.17
0.420 0.440
H
5.21
5.71
0.205 0.225
J
16.64 17.14
0.655 0.675
K
11.18 12.19
0.440 0.480
Q
3.84
4.19
0.151 0.165
R
25.16 25.90
0.991 1.020
IXFH 6N90
IXFH 6N100
IXFM 6N90
IXFM 6N100
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 · I
D25
, pulse test
4
6
S
C
iss
2600
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
180
pF
C
rss
45
pF
t
d(on)
35
100
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
40
110
ns
t
d(off)
R
G
= 4.7
W
(External)
100
200
ns
t
f
60
100
ns
Q
g(on)
88
130
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
21
30
nC
Q
gd
38
70
nC
R
thJC
0.7
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
6
A
I
SM
Repetitive; pulse width limited by T
JM
24
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
t
rr
T
J
=
25
°
C
250
ns
T
J
= 125
°
C
400
ns
Q
RM
T
J
=
25
°
C
0.5
m
C
T
J
= 125
°
C
1.0
m
C
I
RM
T
J
=
25
°
C
7.5
A
T
J
= 125
°
C
9.0
A
I
F
= I
S
-di/dt = 100 A/
m
s,
V
R
= 100 V
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
© 2000 IXYS All rights reserved
IXFH 6N90
IXFH 6N100
IXFM 6N90
IXFM 6N100
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
Fig. 3 R
DS(on)
vs. Drain Current
Fig. 4 Temperature Dependence
of Drain to Source Resistance
5V
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV/V
G(t
h
)
-
N
o
rm
a
liz
e
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
GS(th)
BV
DSS
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
- Am
per
es
0
1
2
3
4
5
6
7
6N100
6N90
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
DS
(
on)
- N
o
rm
a
liz
e
d
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
2
4
6
8
10
R
DS
(
o
n
)
-
O
h
m
s
1.8
2.0
2.2
2.4
2.6
2.8
3.0
V
GS
= 15V
V
GS
= 10V
V
GS
- Volts
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
I
D
-
Amperes
0
1
2
3
4
5
6
7
8
9
V
DS
- Volts
0
5
10
15
20
25
30
I
D
- Am
per
es
0
1
2
3
4
5
6
7
8
9
V
GS
= 10V
T
J
= 125°C
I
D
= 3.0A
6V
T
J
=25°C
T
J
= 25°C
T
J
= - 55°C
T
J
=25°C
4 - 4
© 2000 IXYS All rights reserved
IXFH 6N90
IXFH 6N100
IXFM 6N90
IXFM 6N100
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves
Fig.10Source Current vs. Source
to Drain Voltage
Fig.11 Transient Thermal Impedance
V
DS
- Volts
1
10
100
1000
I
D
-
Am
per
e
s
0.1
1
10
Gate Charge - nCoulombs
0
10
20
30
40
50
60
70
80
V
GE
-
V
o
lts
0
1
2
3
4
5
6
7
8
9
10
V
DS
- Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
-
Am
per
e
s
0
1
2
3
4
5
6
7
8
9
V
CE
- Volts
0
5
10
15
20
25
Capa
ci
t
a
n
c
e -
pF
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
2750
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Th
er
m
a
l
Res
pon
se -
K
/
W
0.001
0.010
0.100
1.000
C
rss
C
oss
C
iss
10µs
100µs
1ms
10ms
100ms
Single Pulse
Limited by R
DS(on)
V
DS
= 500V
I
D
= 3.0A
I
G
= 10mA
f = 1 MHz
V
DS
= 25V
T
J
= 125°C
T
J
= 25°C
D=0.01
D=0.05
D=0.1
D=0.2
D=0.5
6N90 limit
6N100 limit
D=0.02
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