Symbol

Test Conditions

Maximum Ratings

DSS

= 25

C to 175

500

DGR

= 25

C to 175

C; R

= 1 M

500

GSM

Transient

GSM

Continuous

D25

= 25

C, pulse width limited by T

132

= 25

1.7

dv/dt

, di/dt

100 A/

s, V

DSS

V/ns

150

C, R

= 10

= 25

650

-55 ... +150

150

stg

-55 ... +150

1.6 mm (0.062 in.) from case for 10 s

300

Maximum tab temperature for soldering

260

for 10s

Mounting torque(TO-247)

1.13/10 Nm/lb.in.

Weight

TO-247

TO-268

5 g

TO-264 10 g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99364(03/05)

Symbol

Test Conditions

Characteristic Values

= 25

C, unless otherwise specified)

Min. Typ.

Max.

DSS

= 0 V, I

= 250

500

GS(th)

= V

, I

= 4 mA

3.0

5.0

GSS

30 V

, V

= 0

DSS

= V

DSS

= 0 V

= 125

500

DS(on)

= 10 V, I

= 0.5 I

D25

140 m

Pulse test, t

300

s, duty cycle d

2 %

PolarHV

HiPerFET
Power MOSFET

Advance Technical Information

N-Channel Enhancement
ModeAvalanche Rated
Fast Intrinsic Diode

Features

International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect

Advantages

Easy to mount
Space savings
High power density

IXFH 44N50P
IXFT 44N50P
IXFK 44N50P

DSS

= 500 V

D25

= 44 A

DS(on)

< 140 m

< 200 ns

TO-247 AD (IXFH)

(TAB)

TO-268 (IXTT)

D (TAB)

(TAB)

TO-264 (IXTK)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH44N50P IXFT 44N50P

IXFK 44N50P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Symbol

Test Conditions Characteristic Values
(T

= 25

C, unless otherwise specified)

Min.

Typ.

Max.

= 20 V; I

= 0.5 I

D25

, pulse test

iss

5440

oss

= 0 V, V

= 25 V, f = 1 MHz

639

rss

d(on)

= 10 V, V

= 0.5 V

DSS

, I

= I

D25

d(off)

= 3

(External)

g(on)

= 10 V, V

= 0.5 V

DSS

, I

= 0.5 I

D25

thJC

0.19 K/W

thCK

(TO-247)

0.21

K/W

(TO-264) 0.15 K/W

Source-Drain Diode Characteristic Values

= 25

C, unless otherwise specified)

Symbol

Test Conditions

Min.

typ.

Max.

= 0 V

Repetitive

132

= I

, V

= 0 V,

1.5

Pulse test, t

300

s, duty cycle d

2 %

= 22 A,

200

-di/dt = 100 A/

0.6

= 100V 6.0 A

TO-247 AD (IXFH) Outline

Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain

1 2 3

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

4.7

5.3

.185

.209

2.2

2.54

.087

.102

2.2

2.6

.059

.098

1.0

1.4

.040

.055

1.65

2.13

.065

.084

2.87

3.12

.113

.123

.016

.031

20.80

21.46

.819

.845

15.75

16.26

.610

.640

5.20

5.72

0.205

0.225

19.81

20.32

.780

.800

4.50

.177

3.55

3.65

.140

.144

5.89

6.40

0.232

0.252

4.32

5.49

.170

.216

6.15 BSC

242 BSC

TO-268 (IXTT) Outline

Millimeter

Inches

Min.

Max.

Min.

Max.

4.82

5.13

.190

.202

2.54

2.89

.100

.114

2.00

2.10

.079

.083

1.12

1.42

.044

.056

2.39

2.69

.094

.106

2.90

3.09

.114

.122

0.53

0.83

.021

.033

25.91

26.16

1.020

1.030

19.81

19.96

.780

.786

5.46 BSC

.215 BSC

0.00

0.25

.000

.010

0.00

0.25

.000

.010

20.32

20.83

.800

.820

2.29

2.59

.090

.102

3.17

3.66

.125

.144

6.07

6.27

.239

.247

8.38

8.69

.330

.342

3.81

4.32

.150

.170

1.78

2.29

.070

.090

6.04

6.30

.238

.248

1.57

1.83

.062

.072

Dim.

TO-264 Outline

IXFH44N50P IXFT 44N50P

IXFK 44N50P

Fig. 2. Extended Output Characteristics

@ 25

100

D S

- Volts

- A

p
e
re

= 10V

Fig. 3. Output Characteristics

@ 125

D S

- Volts

- A

p
e
r
e
s

= 10V

8V
7V

Fig. 1. Output Characteristics

@ 25

D S

- Volts

- A

p
e
re

= 10V

8V
7V

Fig. 4. R

DS(on

)

Normalized to 0.5 I

D25

Value vs. Junction Temperature

0.4

0.7

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

-50

-25

100

125

150

- Degrees Centigrade

(

o
n

)

- N

o
rm

a
l
i
z
e
d

= 44A

= 22A

= 10V

Fig. 6. Drain Current vs. Case

Tem perature

-50

-25

100

125

150

- Degrees Centigrade

- A

p
e
r
e
s

Fig. 5. R

DS(on)

Normalized to

0.5 I

D25

Value vs. I

0.7

1.3

1.6

1.9

2.2

2.5

2.8

3.1

3.4

100

- Amperes

(

o n )

- N

o
rm

a
l
i
z
e
d

= 125

= 25

= 10V

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFH44N50P IXFT 44N50P

IXFK 44N50P

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

Fig. 11. Capacitance

100

1000

10000

D S

- Volts

apa

c
i
t
anc

e -

pic

o
F

a
r
ads

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

90 100

- nanoCoulombs

G S

- V

o
l
t
s

= 250V

= 22A

= 10mA

Fig. 7. Input Adm ittance

3.5

4.5

5.5

6.5

G S

- Volts

per

= 125

-40

Fig. 8. Transconductance

- Amperes

f s

i
em

ens

= -40

125

Fig. 9. Source Current vs.

Source-To-Drain Voltage

100

120

140

0.4

0.5

0.6

0.7

0.8

0.9

1.1

1.2

S D

- Volts

per

= 125

= 25

Fig. 12. Forw ard-Bias

Safe Operating Area

100

1000

100

1000

D S

- Volts

p
e
re

100ľs

1ms

= 150şC

= 25şC

DS(on)

Limit

10ms

25ľs

Part Number IXFH44N50P