1 - 4
© 2000 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
300
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
W
300
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
35N30
35
A
40N30
40
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
35N30
140
A
40N30
160
A
I
AR
T
C
= 25
°
C
35N30
35
A
40N30
40
A
E
AR
T
C
= 25
°
C
30
mJ
dv/dt
I
S
£
I
DM
, di/dt
£
100 A/
m
s, V
DD
£
V
DSS
,
5
V/ns
T
J
£
150
°
C, R
G
= 2
W
P
D
T
C
= 25
°
C
300
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque
1.13/10
Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
m
A
300
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2
4
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 · V
DSS
T
J
= 25
°
C
200
m
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
35N30
0.100
W
FH40N30
0.085
W
FM40N30
0.088
W
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
V
DSS
I
D25
R
DS(on)
IXFH/IXFM
35
N30
300 V
35 A 100 m
W
IXFH
40
N30
300 V
40 A
85 m
W
IXFM
40
N30
300 V
40 A
88 m
W
t
rr
£
200 ns
TO-247 AD (IXFH)
TO-204 AE (IXFM)
D
G
Features
· International standard packages
· Low R
DS (on)
HDMOS
TM
process
· Rugged polysilicon gate cell structure
· Unclamped Inductive Switching (UIS)
rated
· Low package inductance
- easy to drive and to protect
· Fast intrinsic Rectifier
Applications
· DC-DC converters
· Synchronous rectification
· Battery chargers
· Switched-mode and resonant-mode
power supplies
· DC choppers
· AC motor control
· Temperature and lighting controls
· Low voltage relays
Advantages
· Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
· Space savings
· High power density
G = Gate,
D = Drain,
S = Source,
TAB = Drain
91523F (07/00)
(TAB)
2 - 4
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
22
25
S
C
iss
4800
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
745
pF
C
rss
280
pF
t
d(on)
20
30
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 I
D25
60
90
ns
t
d(off)
R
G
= 2
W
(External)
75
100
ns
t
f
45
90
ns
Q
g(on)
177
200
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 I
D25
28
50
nC
Q
gd
78
105
nC
R
thJC
0.42
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
35N30
35
A
40N30
40
A
I
SM
Repetitive;
35N30
140
A
pulse width limited by T
JM
40N30
160
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/
m
s,
T
J
=
25
°
C
200
ns
V
R
= 100 V
T
J
= 125
°
C
350
ns
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-204 AE (IXFM) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
38.61 39.12
1.520 1.540
B
- 22.22
- 0.875
C
6.40 11.40
0.252 0.449
D
1.45
1.60
0.057 0.063
E
1.52
3.43
0.060 0.135
F
30.15
BSC
1.187
BSC
G
10.67 11.17
0.420 0.440
H
5.21
5.71
0.205 0.225
J
16.64 17.14
0.655 0.675
K
11.18 12.19
0.440 0.480
Q
3.84
4.19
0.151 0.165
R
25.16 26.66
0.991 1.050
IXFH 35N30
IXFH 40N30
IXFM 35N30
IXFM 40N30
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
4 - 4
© 2000 IXYS All rights reserved
IXFH 35N30
IXFH 40N30
IXFM 35N30
IXFM 40N30
V
DS
- Volts
1
10
100
I
D
-
A
m
peres
1
10
100
Gate Charge - nCoulombs
0
25
50
75
100 125 150 175 200
V
GE
- V
o
lt
s
0
2
4
6
8
10
V
SD
- Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
-
A
m
per
e
s
0
10
20
30
40
50
60
70
80
Vds - Volts
0
5
10
15
20
25
Capaci
t
anc
e
-
pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
Thermal
Response
-
K/W
0.001
0.01
0.1
1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
C
rss
300
10µs
100µs
1ms
10ms
100ms
C
oss
Limited by R
DS(on)
V
DS
= 150V
I
D
= 21A
I
G
= 10mA
C
iss
Single Pulse
T
J
= 125°C
T
J
= 25°C
f = 1 MHz
V
DS
= 25V
Fig.7 Gate Charge Characteristic Curve
Fig.8 Forward Bias Safe Operating Area
Fig.9 Capacitance Curves
Fig.10 Source Current vs. Source
Fig.11 Transient Thermal Impedance
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