© 2003 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
1000
V
V
DGR
T
J
= 25
°C to 150°C; R
GS
= 1 M
1000
V
V
GS
Continuous
±30
V
V
GSM
Transient
±40
V
I
D25
T
C
= 25
°C
14
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
56
A
I
AR
T
C
= 25
°C
14
A
E
AR
T
C
= 25
°C
50
mJ
E
AS
T
C
= 25
°C
2.5
J
dv/dt
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
20
V/ns
T
J
150°C, R
G
= 2
P
D
T
C
= 25
°C
500
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.063 in) from case for 10 s
300
°C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
Low R
g
, High dv/dt, Low t
rr
Features
Double metal process for low gate
resistance
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
DS (on)
, low Q
g
Avalanche energy and current rated
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
µA
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
3.0
5.0
V
I
GSS
V
GS
=
±30 V
DC
, V
DS
= 0
±200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°C
25
µA
V
GS
= 0 V
T
J
= 125
°C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 · I
D25
0.90
Pulse test, t
300 µs, duty cycle d 2 %
DS99073(08/03)
TO-247 AD (IXFH)
(TAB)
Advanced Technical Data
IXFH14N100Q2
V
DSS
= 1000 V
I
D25
= 14 A
R
DS(on)
= 0.90
t
rr
300 ns
G = Gate
S = Source
TAB = Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 · I
D25
, pulse test
10
14
S
C
iss
2700
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
300
pF
C
rss
100
pF
t
d(on)
12
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
10
ns
t
d(off)
R
G
= 2
(External),
28
ns
t
f
12
ns
Q
g(on)
83
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
20
nC
Q
gd
40
nC
R
thJC
0.25
K/W
R
thCK
TO-247
0.25
K/W
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205
0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232
0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
Source-Drain Diode
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ. max.
I
S
V
GS
= 0 V
14
A
I
SM
Repetitive; pulse width limited by T
JM
56
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300 µs, duty cycle d 2 %
t
rr
300
ns
Q
RM
0.8
µC
I
RM
7
A
I
F
= I
S
, -di/dt = 100 A/
µs, V
R
= 100 V
IXFH14N100Q2
© 2003 IXYS All rights reserved
IXFH14N100Q2
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
3
6
9
12
15
18
21
24
27
0
5
10
15
20
25
30
V
DS
- Volts
I
D
-
A
m
p
e
re
s
V
G S
= 1 0V
8V
5V
6V
7V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
2
4
6
8
10
12
14
0
5
10
15
20
25
30
V
DS
- Volts
I
D
- A
m
p
e
re
s
V
G S
= 1 0V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
V
DS
- Volts
I
D
- A
m
p
e
r
e
s
V
G S
= 1 0V
5V
6V
7V
Fig. 4. R
DS(on)
Normalized to I
D25
Value vs.
Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50
-25
0
25
50
75
100
125
150
T
J
- Degrees Centigrade
R
D S
(o
n
)
- N
o
rm
a
l
i
z
e
d
I
D
= 1 4A
I
D
= 7A
V
G S
= 1 0V
Fig. 6. Drain Current vs. Case
Temperature
0
2
4
6
8
10
12
14
16
-50
-25
0
25
50
75
100
125
150
T
C
- Degrees Centigrade
I
D
- A
m
p
e
re
s
Fig. 5. R
DS(on)
Normalized to I
D25
Value vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
0
3
6
9
12
15
18
21
24
27
I
D
- Amperes
R
D S
(o
n
)
- N
o
rm
a
l
i
z
e
d
T
J
= 1 25
º
C
T
J
= 25
º
C
V
G S
= 1 0V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH14N100Q2
Fig. 11. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
DS
- Volts
C
a
p
a
c
i
t
anc
e -
p
F
Ciss
Coss
Crss
f = 1 M Hz
Fig. 10. Gate Charge
0
2
4
6
8
10
0
10
20
30
40
50
60
70
80
90
Q
G
- nanoCoulombs
V
G S
- V
o
l
t
s
V
D S
= 500V
I
D
= 7A
I
G
= 1 0mA
Fig. 7. Input Admittance
0
3
6
9
12
15
18
21
4
4.5
5
5.5
6
6.5
7
V
GS
- Volts
I
D
- A
m
p
e
r
e
s
T
J
= 1 20
º
C
25
º
C
-40
º
C
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(t
h
)
J
C
-
(º
C
/
W
)
Fig. 8. Transconductance
0
4
8
12
16
20
24
28
0
3
6
9
12
15
18
21
24
I
D
- Amperes
g
f s
-
S
i
em
en
s
T
J
= -40
º
C
25
º
C
1 25
º
C
Fig. 9. Source Current vs. Source-To-Drain
Voltage
0
7
14
21
28
35
42
0.3
0.5
0.7
0.9
1.1
1.3
V
SD
- Volts
I
S
- A
m
p
e
re
s
T
J
= 1 25
º
C
T
J
= 25
º
C
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