1 - 4
© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
1000
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
W
1000
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C
10N100
10
A
12N100
12
A
13N100
12.5
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
10N100
40
A
12N100
48
A
13N100
50
A
I
AR
T
C
= 25
°
C
10N100
10
A
12N100
12
A
13N100
12.5
A
E
AR
T
C
= 25
°
C
30
mJ
dv/dt
I
S
£
I
DM
, di/dt
£
100 A/
m
s, V
DD
£
V
DSS
,
5
V/ns
T
J
£
150
°
C, R
G
= 2
W
P
D
T
C
= 25
°
C
300
W
T
J
-55 ... +150
°
C
T
JM
150
°
C
T
stg
-55 ... +150
°
C
T
L
1.6 mm (0.062 in.) from case for 10 s
300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 · V
DSS
T
J
=
25
°
C
250
m
A
V
GS
= 0 V
T
J
= 125
°
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 · I
D25
10N100
1.20
W
12N100
1.05
W
13N100
0.90
W
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AA (IXFM)
G = Gate,
D = Drain,
S = Source,
TAB = Drain
Features
q
International standard packages
q
Low R
DS (on)
HDMOS
TM
process
q
Rugged polysilicon gate cell structure
q
Unclamped Inductive Switching (UIS)
rated
q
Low package inductance
- easy to drive and to protect
q
Fast intrinsic Rectifier
Applications
q
DC-DC converters
q
Synchronous rectification
q
Battery chargers
q
Switched-mode and resonant-mode
power supplies
q
DC choppers
q
AC motor control
q
Temperature and lighting controls
q
Low voltage relays
Advantages
q
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
q
Space savings
q
High power density
D
G
V
DSS
I
D25
R
DS(on)
IXFH/IXFM
10
N100
1000 V
10 A 1.20
W
IXFH/IXFM
12
N100
1000 V
12 A 1.05
W
IXFH
13
N100
1000 V 12.5 A 0.90
W
t
rr
£
250 ns
HiPerFET
TM
Power MOSFETs
91531F(4/99)
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
© 2000 IXYS All rights reserved
TO-247 AD (IXFH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-204 AA (IXFM) Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
38.61 39.12
1.520 1.540
B
19.43 19.94
- 0.785
C
6.40
9.14
0.252 0.360
D
0.97
1.09
0.038 0.043
E
1.53
2.92
0.060 0.115
F
30.15
BSC
1.187
BSC
G
10.67 11.17
0.420 0.440
H
5.21
5.71
0.205 0.225
J
16.64 17.14
0.655 0.675
K
11.18 12.19
0.440 0.480
Q
3.84
4.19
0.151 0.165
R
25.16 25.90
0.991 1.020
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 · I
D25
, pulse test
6
10
S
C
iss
4000
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
310
pF
C
rss
70
pF
t
d(on)
21
50
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
33
50
ns
t
d(off)
R
G
= 2
W
(External),
62
100
ns
t
f
32
50
ns
Q
g(on)
122
155
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
30
45
nC
Q
gd
50
80
nC
R
thJC
0.42
K/W
R
thCK
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
10N100
10
A
12N100
12
A
13N100
12.5
A
I
SM
Repetitive;
10N100
40
A
pulse width limited by T
JM
12N100
48
A
13N100
50
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
£
300
m
s, duty cycle d
£
2 %
t
rr
T
J
=
25
°
C
250
ns
T
J
= 125
°
C
400
ns
Q
RM
T
J
=
25
°
C
1
m
C
T
J
= 125
°
C
2
m
C
I
RM
T
J
=
25
°
C
10
A
T
J
= 125
°
C
15
A
I
F
= I
S
-di/dt = 100 A/
m
s,
V
R
= 100 V
IXFH 10N100
IXFH 12N100
IXFH 13N100
IXFM 10N100
IXFM 12N100
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
© 2000 IXYS All rights reserved
IXFH 10N100
IXFH 12N100
IXFH 13N100
IXFM 10N100
IXFM 12N100
Fig. 1 Output Characteristics
Fig. 2 Input Admittance
Fig. 5 Drain Current vs.
Fig. 6 Temperature Dependence of
Case Temperature
Breakdown and Threshold Voltage
Fig. 3
R
DS(on)
vs. Drain Current
Fig. 4
Temperature Dependence
of Drain to Source Resistance
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
BV/
V
G(
t
h
)
- N
o
r
m
a
lize
d
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
BV
DSS
V
GS(th)
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
-
Am
per
es
0
2
4
6
8
10
12
14
16
18
20
10N100
T
J
- Degrees C
-50
-25
0
25
50
75
100 125 150
R
D
S
(
on)
- N
o
rm
a
l
i
z
e
d
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
- Amperes
0
5
10
15
20
25
R
D
S
(
on)
- N
o
rm
a
l
i
z
e
d
0.9
1.0
1.1
1.2
1.3
1.4
1.5
V
GS
= 10V
V
GS
- Volts
0
1
2
3
4
5
6
7
8
9
10
I
D
-
Am
per
es
0
2
4
6
8
10
12
14
16
18
20
V
DS
- Volts
0
5
10
15
20
I
D
-
Am
per
es
0
2
4
6
8
10
12
14
16
18
20
6V
7V
V
GS
= 10V
12N100
I
D
= 6A
V
GS
= 15V
5V
T
J
= 25°C
T
J
= 25°C
T
J
= 25°C
4 - 4
© 2000 IXYS All rights reserved
IXFH 10N100
IXFH 12N100
IXFH 13N100
IXFM 10N100
IXFM 12N100
Fig.7 Gate Charge Characteristic Curve
Fig.8 Capacitance Curves
Fig.9 Source Current vs. Source
to Drain Voltage
Fig.10 Transient Thermal Impedance
V
DS
- Volts
1
10
100
1000
I
D
- A
m
p
e
r
e
s
0.1
1
10
Gate Charge - nCoulombs
0
25
50
75
100
125
150
V
GS
-
V
o
l
t
s
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I
D
- A
m
p
e
r
e
s
0
2
4
6
8
10
12
14
16
18
20
V
DS
- Volts
0
5
10
15
20
Ca
pacit
a
n
ce
-
pF
0
500
1000
1500
2000
2500
3000
3500
4000
4500
Time - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
10
T
herm
a
l
R
e
sp
onse
-
K
/
W
0.001
0.01
0.1
1
D=0.5
C
rss
C
oss
10µs
100µs
1ms
10ms
100ms
C
iss
Limited by R
DS(on)
V
DS
= 500V
I
D
= 6A
I
G
= 10mA
Single Pulse
f = 1MHz
V
DS
= 25V
T
J
= 125°C
T
J
= 25°C
D=0.2
D=0.1
D=0.05
D=0.01
D=0.02
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