© 2002 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
500
V
V
GH(th)
V
DS
= V
GS
, I
D
= 8 mA
2
4V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
200
nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°
C
100
µ
A
V
GS
= 0 V
T
J
= 125
°
C
2
mA
R
DS(on)
V
GS
= 10 V, I
D
=
I
T
55
m
Note 2
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°
C to 150
°
C
500
V
V
DGR
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
V
GS
Continuous
±
20
V
V
GSM
Transient
±
30
V
I
D25
T
C
= 25
°
C, Chip capability
72
A
I
DM
T
C
= 25
°
C,
Note 1
320
A
I
AR
T
C
= 25
°
C
80
A
E
AR
T
C
= 25
°
C
64
mJ
E
AS
T
C
= 25
°
C
6
J
dv/dt
I
S
I
DM
, di/dt
100 A/
µ
s, V
DD
V
DSS
5
V/ns
T
J
150
°
C, R
G
= 2
P
D
T
C
= 25
°
C
580
W
T
J
-40 ... +150
°
C
T
JM
150
°
C
T
stg
-40 ... +150
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque
1.5/13 Nm/lb.in.
Terminal connection torque
1.5/13 Nm/lb.in.
Weight
19
g
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
D
S
G
S
IXFE 80N50
V
DSS
= 500 V
I
D25
= 72 A
R
DS(on)
= 55 m
Features
·
Conforms to SOT-227B outline
·
Low R
DS (on)
HDMOS
TM
process
·
Rugged polysilicon gate cell structure
·
Unclamped Inductive Switching (UIS)
rated
·
Low package inductance
·
Fast intrinsic Rectifier
Applications
·
DC-DC converters
·
Battery chargers
·
Switched-mode and resonant-mode
power supplies
·
DC choppers
·
Temperature and lighting controls
Advantages
·
Low cost
·
Easy to mount
·
Space savings
·
High power density
G = Gate
D = Drain
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
98898A (5/02)
Preliminary data sheet
ISOPLUS 227
TM
(IXFE)
S
G
S
D
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXFE 80N50
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 15 V; I
D
= I
T
, Note 2
50
70
S
C
iss
9890
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1750
pF
C
rss
460
pF
t
d(on)
61
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= I
T
70
ns
t
d(off)
R
G
= 1
(External),
102
ns
t
f
27
ns
Q
g(on)
380
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= I
T
80
nC
Q
gd
173
nC
R
thJC
0.22
K/W
R
thCK
0.07
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
80
A
I
SM
Repetitive;
320
A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.3
V
Pulse test, t
300
µ
s, duty cycle d
2 %
t
rr
I
F
= 25A, -di/dt = 100 A/
µ
s, V
R
= 100 V
250
ns
Q
RM
1.2
µ
C
I
RM
8
A
ISOPLUS-227 B
Please see IXFN80N50 data sheet
for characteristic curves.
Notes: 1. Pulse width limited by T
JM.
2. Pulse test, t
300 ms, duty cycle d
2%
.
3.
I
T
Test current:
I
T
= 40 A
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