© 2005 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
1000
V
V
DGR
T
J
= 25
°C to 150°C; R
GS
= 1 M
1000
V
V
GS
Continuous
± 30
V
V
GSM
Transient
± 40
V
I
D25
T
C
= 25
°C
38
A
I
DM
T
C
= 25
°C, pulse width limited by T
JM
152
A
I
AR
T
C
= 25
°C
38
A
E
AR
T
C
= 25
°C
60
mJ
E
AS
T
C
= 25
°C
5.0
J
dv/dt
I
S
I
DM
, di/dt
100 A/s, V
DD
V
DSS
20
V/ns
T
J
150°C, R
G
= 2
P
D
T
C
= 25
°C
890
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°C
F
c
Mounting Force
30...120/7.5...27 N/lb
Weight
10
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°C unless otherwise specified)
min.
typ. max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
1000
V
V
GS(th)
V
DS
= V
GS
, I
D
=8 mA
2.5
5.5 V
I
GSS
V
GS
=
± 30 V, V
DS
= 0
± 200 nA
I
DSS
V
DS
= V
DSS
T
J
= 25
°C
50
A
V
GS
= 0 V
T
J
= 125
°C
3 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 · I
D25
0.25
Note 1
DS98949E(09/05)
PLUS 264
TM
(IXFB)
G = Gate
D = Drain
S = Source
TAB = Drain
S
G
D
(TAB)
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
Low Intrinsic R
g
High dV/dt, Low t
rr
Features
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
PLUS 264
TM
package for clip or spring
mounting
Space savings
High power density
IXFB38N100Q2
V
DSS
= 1000 V
I
D25
= 38 A
R
DS(on)
= 0.25
t
rr
300 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB38N100Q2
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 20 V; I
D
= 0.5 · I
D25
Note 1
24
40
S
C
iss
7200
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
950
pF
C
rss
170
pF
t
d(on)
25
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
28
ns
t
d(off)
R
G
= 1
(External)
57
ns
t
f
15
ns
Q
G(on)
250
nC
Q
GS
V
GS
= 10 V, V
DS
= 0.5 · V
DSS
, I
D
= 0.5 · I
D25
60
nC
Q
GD
105
nC
R
thJC
0.14
K/W
R
thCK
0.13
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
38
A
I
SM
Repetitive;
152
A
pulse width limited by T
JM
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1
1.5
V
t
rr
300
ns
Q
RM
1.4
C
I
RM
9
A
I
F
= 25A
-di/dt = 100 A/
s
V
R
= 100 V
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 264
TM
Outline
Note: 1. Pulse test, t
300 s, duty cycle d 2 %
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or more of the following U.S. patents:
4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405B2
6,759,692
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6771478 B2
© 2005 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25 deg. C
0
15
30
45
60
75
0
5
10
15
20
25
V
DS
- Volts
I
D
-
A
m
p
e
r
e
s
V
GS
= 10V
9V
8V
7V
5V
6V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
9
18
27
36
45
0
5
10
15
20
25
V
DS
- Volts
I
D
-
A
m
p
e
r
e
s
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
4
8
12
16
20
0
1
2
3
4
5
6
7
V
DS
- Volts
I
D
-
A
m
p
e
r
e
s
V
GS
= 10V
9V
8V
7V
6V
5V
Fig. 4. R
DS(on)
Normalized to I
D25
Value
vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
-50
-25
0
25
50
75
100 125 150
T
J
- Degrees Centigrade
R
DS
(
o
n
)
-
N
o
r
m
a
l
i
z
e
d
I
D
= 38A
I
D
= 19A
Fig. 6. Drain Current vs. Case
Temperature
0
8
16
24
32
40
-50
-25
0
25
50
75
100 125 150
T
C
- Degrees Centigrade
I
D
-
A
m
p
e
r
e
s
Fig. 5. R
DS(on)
Normalized to I
D25
Value
vs. I
D
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
0
20
40
60
80
I
D
- Amperes
R
DS
(
o
n
)
-
No
r
m
al
i
z
ed
T
J
= 125
°
C
T
J
= 25
°
C
IXFB38N100Q2
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB38N100Q2
Fig. 9. Source Current vs. Source-To-
Drain Voltage
-100
-80
-60
-40
-20
0
-1.3
-1.1
-0.9
-0.7
-0.5
-0.3
V
SD
- Volts
I
S
-
A
m
p
ere
s
T
J
= 125
°
C
T
J
= 25
°
C
Fig. 11. Capacitance
100
1000
10000
0
10
20
30
40
V
DS
- Volts
C
a
p
a
c
i
ta
n
c
e
-
p
F
Ciss
Coss
Crss
f=1Mhz
Fig. 10. Gate Charge
0
2
4
6
8
10
0
50
100
150
200
250
Q
G
- nanoCoulombs
V
GS
-
V
o
l
t
s
V
DS
= 500V
I
D
= 19A
I
G
= 10mA
Fig. 7. Input Admittance
0
8
16
24
32
40
3
3.5
4
4.5
5
5.5
6
V
GS
- Volts
I
D
-
Am
p
e
res
T
J
= -40
°
C
25
°
C
125
°
C
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.1
1
1
10
100
1000
Pulse Width - milliseconds
R
(th
)J
C
-
(º
C
/
W
)
Fig. 8. Transconductance
0
15
30
45
60
75
0
10
20
30
40
I
D
- Amperes
G
fs
-
Si
e
m
e
n
s
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= -40
°
C
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