© 2004 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions
DSEP 8-03AS
432
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
· Planar passivated chips
· Very short recovery time
· Extremely low switching losses
· Low I
RM
-values
· Soft recovery behaviour
Applications
· Anti saturation diode
· Snubber diode
· Free wheeling diode in converters
and motor control circuits
· Rectifiers in switch mode power
supplies (SMPS)
· Inductive heating and melting
· Uninterruptible power supplies (UPS)
· Ultrasonic cleaners and welders
Advantages
· High reliability circuit operation
· Low voltage peaks for reduced
protection circuits
· Low noise switching
· Low losses
· Operating at lower temperature or
space saving by reduced cooling
Dimensions see Outlines.pdf
I
FAVM
= 8 A
V
RRM
= 300 V
t
rr
= 30 ns
TO-252AA (DPAK)
Anode
Anode
Cathode (Flange)
V
RSM
V
RRM
Type
Marking
V
V
on product
300
300
DSEP 8-03AS
8P030AS
C
A
Symbol
Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
20
A
I
FAVM
T
C
= 152°C; rectangular, d = 0.5
8
A
I
FRM
t
P
< 10 µs; rep. rating, pulse width limited by T
VJM
12
A
I
FSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine
60
A
E
AS
T
VJ
= 25°C; non-repetitive
0.5
mJ
I
AS
= 2 A; L = 180 µH
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
0.2
A
T
VJ
-40...+175
°C
T
VJM
175
°C
T
stg
-40...+150
°C
P
tot
T
C
= 25°C
60
W
Weight
typ.
0.3
g
I
FAVM
rating includes reverse blocking losses
at T
VJM
, V
R
= 0.6 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
; T
VJ
= 25°C
60
µA
V
R
= V
RRM
; T
VJ
= 150°C
0.25
mA
V
F
I
F
= 8 A;
T
VJ
= 150°C
1.13
V
T
VJ
= 25°C
1.69
V
R
thJC
2.5
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/µs; V
R
= 30 V; T
VJ
= 25°C
30
ns
I
RM
V
R
= 100 V; I
F
= 12 A; -di
F
/dt = 100 A/µs
2
2.4
A
T
VJ
= 100°C
© 2004 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions
DSEP 8-03AS
432
200
600
1000
0
400
800
30
40
50
60
70
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
4
8
12
16
0.0
0.2
0.4
0.6
0.8
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
100
1000
0
100
200
300
400
0.0
0.5
1.0
1.5
2.0
0
10
20
30
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
µs
A
V
nC
A/
µs
A/
µs
t
rr
ns
t
fr
A/
µs
µs
DSEP 8-03A
Z
thJC
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
I
F
= 20A
I
F
= 10A
I
F
= 5A
T
VJ
= 100°C
V
R
= 150V
T
VJ
= 100°C
V
R
= 150V
T
VJ
= 100°C
V
R
= 150V
T
VJ
= 100°C
I
F
= 10A
V
FR
t
fr
I
RM
Q
r
I
F
= 20A
I
F
= 10A
I
F
= 5A
I
F
= 20A
I
F
= 10A
I
F
= 5A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
1.449
0.005
2
0.558
0.0003
3
0.493
0.017
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