© 2003 IXYS All rights reserved
1 - 2
311
DSEP 60-04A
IXYS reserves the right to change limits, test conditions and dimensions.
I
FAV
= 60 A
V
RRM
= 400 V
t
rr
= 30 ns
V
RSM
V
RRM
Type
V
V
400
400
DSEP 60-04A
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAVM
T
C
= 120°C; rectangular, d = 0.5
60
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
600
A
E
AS
T
VJ
= 25°C; non-repetitive
1.6
mJ
I
AS
= 3.5 A; L = 180 µH
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
0.4
A
T
VJ
-55...+175
°C
T
VJM
175
°C
T
stg
-55...+150
°C
P
tot
T
C
= 25°C
230
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C; V
R
= V
RRM
650
µA
T
VJ
= 150°C; V
R
= V
RRM
2
mA
V
F
I
F
= 60 A;
T
VJ
= 150°C
1.01
V
T
VJ
= 25°C
1.24
V
R
thJC
0.65
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 300 A/µs;
30
ns
V
R
= 30 V; T
VJ
= 25°C
I
RM
V
R
= 100 V; I
F
= 130 A; -di
F
/dt = 100 A/µs
6.0
7.5
A
T
VJ
= 100°C
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
· International standard package
· Planar passivated chips
· Very short recovery time
· Extremely low switching losses
· Low I
RM
-values
· Soft recovery behaviour
· Epoxy meets UL 94V-0
Applications
· Antiparallel diode for high frequency
switching devices
· Antisaturation diode
· Snubber diode
· Free wheeling diode in converters
and motor control circuits
· Rectifiers in switch mode power
supplies (SMPS)
· Inductive heating
· Uninterruptible power supplies (UPS)
· Ultrasonic cleaners and welders
Advantages
· Avalanche voltage rated for reliable
operation
· Soft reverse recovery for low
EMI/RFI
· Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
µ
s, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
C (TAB)
C
A
© 2003 IXYS All rights reserved
2 - 2
311
DSEP 60-04A
IXYS reserves the right to change limits, test conditions and dimensions.
200
600
1000
0
400
800
40
60
80
100
120
140
160
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
10
20
30
40
50
1.55
1.60
1.65
1.70
1.75
1.80
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
10
20
30
40
50
60
70
100
1000
0
500
1000
1500
2000
2500
3000
0.0
0.4
0.8
1.2
1.6
0
20
40
60
80
100
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
µ
s
A
V
nC
A/
µ
s
A/
µ
s
t
rr
ns
A/
µ
s
DSEP 60-04A
Z
thJC
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C
V
FR
t
fr
I
RM
Q
r
t
fr
µ
s
T
VJ
= 100°C
V
R
= 200 V
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100°C
V
R
= 200 V
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100°C
V
R
= 200 V
I
F
= 120 A
I
F
= 60 A
I
F
= 30 A
T
VJ
= 100°C
I
F
= 60 A
Fig. 3 Typ. peak reverse current I
RM
Fig. 2 Typ. reverse recovery charge Q
r
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Typ. dynamic parameters Q
r
, I
RM
Fig. 5 Typ. recovery time t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
Fig. 7 Transient thermal resistance junction to case
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