© 2004 IXYS All rights reserved
1 - 3
417
IXYS reserves the right to change limits, test conditions and dimensions.
I
FAV
= 30 A
V
RRM
= 600 V
t
rr
= 30/35 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEP 29-06A
600
600
DSEP 29-06AS
600
600
DSEP 29-06B
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
rect., d = 0.5; T
C
(Version A, AS)
= 135°C
30
A
T
C
(Version B)
= 125°C
30
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine;
(Version A, AS)
250
A
(Version B)
200
A
E
AS
T
VJ
= 25°C; non-repetitive
0.2
mJ
I
AS
= 1.3 A; L = 180 µH
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
°C
T
VJM
175
°C
T
stg
-55...+150
°C
P
tot
T
C
= 25°C
165
W
M
d
mounting torque
(Version A, B)
0.4...0.6
Nm
Weight
typical
2
g
Symbol
Conditions
Characteristic max. Values
Version A
Version B
I
R
T
VJ
= 25°C; V
R
= V
RRM
250
250
µA
T
VJ
= 150°C; V
R
= V
RRM
1
2
mA
V
F
I
F
= 30 A;
T
VJ
= 150°C
1.26
1.58
V
T
VJ
= 25°C
1.61
2.52
V
R
thJC
0.9
0.9
K/W
R
thCH
typ.
0.5
0.5
K/W
t
rr
typ.
I
F
= 1 A; -di/dt = 200 A/µs;
35
30
ns
V
R
= 30 V; T
VJ
= 25°C
I
RM
typ.
V
R
= 100 V; I
F
= 50 A;
6
4
A
-di
F
/dt = 100 A/µs; T
VJ
= 100°C
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
International standard package
· Planar passivated chips
· Very short recovery time
l
Extremely low switching losses
· Low I
RM
-values
· Soft recovery behaviour
· Epoxy meets UL 94V-0
Applications
· Antiparallel diode for high frequency
switching devices
· Antisaturation diode
· Snubber diode
· Free wheeling diode in converters
and motor control circuits
· Rectifiers in switch mode power
supplies (SMPS)
· Inductive heating
· Uninterruptible power supplies (UPS)
· Ultrasonic cleaners and welders
Advantages
· Avalanche voltage rated for reliable
operation
· Soft reverse recovery for low
EMI/RFI
· Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
C (TAB)
A
A
TO-263
C
A
DSEP 29-06A DSEP 29-06AS
DSEP 29-06B
© 2004 IXYS All rights reserved
2 - 3
417
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 29-06A
DSEP 29-06AS
200
600
1000
0
400
800
70
80
90
100
110
120
130
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
°C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
10
20
30
40
50
100
1000
0
500
1000
1500
2000
2500
3000
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
60
70
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
µs
A
V
nC
A/
µs
A/
µs
t
rr
ns
t
fr
Z
thJC
A/
µs
µs
DSEP 29-06A
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
I
F
= 30A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
T
VJ
= 100°C
V
R
= 300V
T
VJ
= 100°C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
3
0.205
0.0162
T
VJ
=25°C
T
VJ
=100°C
T
VJ
=150°C
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2004 IXYS All rights reserved
3 - 3
417
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 29-06B
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
3
0.205
0.0162
NOTE: Fig. 2 to Fig. 6 shows typical values
200
600
1000
0
400
800
40
60
80
100
120
140
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
10
20
30
40
50
60
0.00
0.05
0.10
0.15
0.20
0.25
0.30
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
2
4
6
8
10
100
1000
0
50
100
150
200
250
300
350
0
1
2
3
4
0
20
40
60
80
100
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
µs
A
V
nC
A/
µs
A/
µs
t
rr
ns
t
fr
Z
thJC
A/
µs
µs
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C
I
RM
Q
r
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
T
VJ
= 100°C
V
R
= 300 V
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
T
VJ
= 100°C
I
F
= 30 A
DSEP 30-06B
t
fr
V
FR
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