D4
© 2001 IXYS All rights reserved
1 - 1
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
G
International standard package
G
Planar passivated chips
G
Very short recovery time
G
Extremely low switching losses
G
Low I
RM
-values
G
Soft recovery behaviour
G
Epoxy meets UL 94V-0
Applications
G
Antiparallel diode for high frequency
switching devices
G
Antisaturation diode
G
Snubber diode
G
Free wheeling diode in converters
and motor control circuits
G
Rectifiers in switch mode power
supplies (SMPS)
G
Inductive heating
G
Uninterruptible power supplies (UPS)
G
Ultrasonic cleaners and welders
Advantages
G
Avalanche voltage rated for reliable
operation
G
Soft reverse recovery for low
EMI/RFI
G
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages D4 - 85-86
C
A
A = Anode, C = Cathode, TAB = Cathode
C
A
TO-220 AC
C (TAB)
Pulse test:
x
Pulse Width = 5 ms, Duty Cycle < 2.0 %
y
Pulse Width = 300
µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
DSEP 15-06B
I
FAV
= 15 A
V
RRM
= 600 V
t
rr
= 25 ns
V
RSM
V
RRM
Type
V
V
600
600
DSEP 15-06B
Symbol
Conditions
Maximum Ratings
I
FRMS
35
A
I
FAVM
T
C
= 130°C; rectangular, d = 0.5
15
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
110
A
E
AS
T
VJ
= 25°C; non-repetitive; I
AS
= 1 A;
L = 100 µH
0.1
mJ
L = 20 mH
20
mJ
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
0.1
A
T
VJ
-55...+175
°C
T
VJM
175
°C
T
stg
-55...+150
°C
P
tot
T
C
= 25°C
95
W
M
d
mounting torque
0.4...0.6
Nm
Weight
typical
2
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
x
T
VJ
= 25°C
V
R
= V
RRM
100
µA
T
VJ
= 150°C V
R
= V
RRM
0.5
mA
V
F
y
I
F
= 15 A;
T
VJ
= 150°C
1.55
V
T
VJ
= 25°C
2.52
V
R
thJC
1.6
K/W
R
thCH
0.5
K/W
t
rr
I
F
= 1 A; -di/dt = 100 A/
µs;
25
30
ns
V
R
= 30 V; T
VJ
= 25°C
I
RM
V
R
= 100 V; I
F
= 25 A; -di
F
/dt = 100 A/
µs
2.6
A
T
VJ
= 100°C
147
Preliminary data
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