© 2002 IXYS All rights reserved
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IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
Advanced Technical Information
I
FAV
= 130 A
V
RRM
= 600 V
t
rr
= 35 ns
DSEP 130-06A
V
RSM
V
RRM
Type
V
V
600
600
DSEP130-06A
225
HiPerFRED
TM
Epitaxial Diode
with soft recovery
Features
· International standard package
· Planar passivated chips
· Very short recovery time
· Extremely low switching losses
· Low I
RM
-values
· Soft recovery behaviour
· Epoxy meets UL 94V-0
Applications
· Antiparallel diode for high frequency
switching devices
· Antisaturation diode
· Snubber diode
· Free wheeling diode in converters
and motor control circuits
· Rectifiers in switch mode power
supplies (SMPS)
· Inductive heating
· Uninterruptible power supplies (UPS)
· Ultrasonic cleaners and welders
Advantages
· Avalanche voltage rated for reliable
operation
· Soft reverse recovery for low
EMI/RFI
· Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see IXYS Databook 2001
A = Anode, C = Cathode, TAB = Cathode
TO-247 AD
C
A
C (TAB)
C
A
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAVM
T
C
= 70°C; rectangular, d = 0.5
130
A
I
FSM
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
1000
A
E
AS
T
VJ
= 25°C; non-repetitive
0.4
mJ
I
AS
= 1.8 A; L = 180 µH
I
AR
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
0.2
A
T
VJ
-55...+175
°C
T
VJM
175
°C
T
stg
-55...+150
°C
P
tot
T
C
= 25°C
375
W
M
d
mounting torque
0.8...1.2
Nm
Weight
typical
6
g
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25°C
V
R
= V
RRM
1000
µA
T
VJ
= 150°C V
R
= V
RRM
4
mA
V
F
I
F
= 130 A;
T
VJ
= 150°C
1.63
V
T
VJ
= 25°C
2.26
V
R
thJC
0.4
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 400 A/µs;
35
ns
V
R
= 30 V; T
VJ
= 25°C
I
RM
V
R
= 100 V; I
F
= 200 A; -di
F
/dt = 100 A/µs
8
10.2
A
T
VJ
= 100°C
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
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