© 2000 IXYS All rights reserved
1 - 2
V
RSM
V
RRM
Type
V
V
640
600
DSEI 8-06A
640
600
DSEI 8-06AS
Symbol
Test Conditions
Maximum Ratings
I
FRMS
T
VJ
= T
VJM
16
A
I
FAVM
ÿÿx
T
C
= 115
°
C; rectangular, d = 0.5
8
A
I
FRM
t
P
< 10
m
s; rep. rating, pulse width limited by T
VJM
130
A
I
FSM
T
VJ
= 45
°
C;
t = 10 ms (50 Hz), sine
100
A
t = 8.3 ms (60 Hz), sine
110
A
T
VJ
= 150
°
C; t = 10 ms (50 Hz), sine
85
A
t = 8.3 ms (60 Hz), sine
95
A
I
2
t
T
VJ
= 45
°
C
t = 10 ms (50 Hz), sine
50
A
2
s
t = 8.3 ms (60 Hz), sine
50
A
2
s
T
VJ
= 150
°
C; t = 10 ms (50 Hz), sine
36
A
2
s
t = 8.3 ms (60 Hz), sine
37
A
2
s
T
VJ
-40...+150
°
C
T
VJM
150
°
C
T
stg
-40...+150
°
C
P
tot
T
C
= 25
°
C
50
W
M
d
Mounting torque
0.4...0.6
Nm
Weight
2
g
Symbol
Test Conditions
Characteristic Values
typ.
max.
I
R
T
VJ
= 25
°
C
V
R
= V
RRM
20
m
A
T
VJ
= 25
°
C
V
R
= 0.8 · V
RRM
10
m
A
T
VJ
= 125
°
C
V
R
= 0.8 · V
RRM
1.5
mA
V
F
I
F
= 8 A;
T
VJ
= 150
°
C
1.3
V
T
VJ
= 25
°
C
1.5
V
V
T0
For power-loss calculations only
0.98
V
r
T
T
VJ
= T
VJM
28.7
m
W
R
thJC
2.5
K/W
R
thCK
0.5
K/W
R
thJA
60
K/W
t
rr
I
F
= 1 A; -di/dt = 50 A/
m
s; V
R
= 30 V; T
VJ
= 25
°
C
35
50
ns
I
RM
V
R
= 350 V;
I
F
= 8 A; -di
F
/dt = 64 A/
m
s
2.5
2.8
A
L
£
0.05
m
H; T
VJ
= 100
°
C
I
FAVM
= 8 A
V
RRM
= 600 V
t
rr
= 35 ns
x
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
q
International standard package
JEDEC TO-220 AC & TO-263 AB
q
Planar passivated chips
q
Very short recovery time
q
Extremely low switching losses
q
Low I
RM
-values
q
Soft recovery behaviour
q
Epoxy meets UL 94V-0
Applications
q
Antiparallel diode for high frequency
switching devices
q
Anti saturation diode
q
Snubber diode
q
Free wheeling diode in converters
and motor control circuits
q
Rectifiers in switch mode power
supplies (SMPS)
q
Inductive heating and melting
q
Uninterruptible power supplies (UPS)
q
Ultrasonic cleaners and welders
Advantages
q
High reliability circuit operation
q
Low voltage peaks for reduced
protection circuits
q
Low noise switching
q
Low losses
q
Operating at lower temperature or
space saving by reduced cooling
A
C
Fast Recovery
Epitaxial Diode (FRED)
DSEI 8
A = Anode, C = Cathode, NC = No connection
TAB = Cathode
NC
A
TO-263 AA
DSEI 8-06AS
C (TAB)
TO-220 AC
DSEI 8-06A
C
C
A
0
3
3
© 2000 IXYS All rights reserved
2 - 2
DSEI 8, 600 V
Fig. 1 Forward current
Fig. 2 Recovery charge versus -di
F
/dt.
Fig. 3 Peak reverse current versus
versus voltage drop.
-di
F
/dt.
Fig. 4 Dynamic parameters versus
Fig. 5 Recovery time versus -di
F
/dt.
Fig. 6 Peak forward voltage
junction temperature.
versus di
F
/dt.
Fig. 7 Transient thermal impedance junction to case.
Dimensions
TO-220 AC
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
12.70 14.73
0.500 0.580
B
14.23 16.51
0.560 0.650
C
9.66 10.66
0.380 0.420
D
3.54
4.08
0.139 0.161
E
5.85
6.85
0.230 0.420
F
2.54
3.42
0.100 0.135
G
1.15
1.77
0.045 0.070
H
-
6.35
-
0.250
J
0.64
0.89
0.025 0.035
K
4.83
5.33
0.190 0.210
L
3.56
4.82
0.140 0.190
M
0.38
0.56
0.015 0.022
N
2.04
2.49
0.080 0.115
Q
0.64
1.39
0.025 0.055
Dimension TO-263 AA see DSEI 19
0
3
3
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